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quality Load Switch and PWM Application MOSFET N Channel MIRACLE POWER MS0009B with 100V Drain Source Voltage factory
quality Load Switch and PWM Application MOSFET N Channel MIRACLE POWER MS0009B with 100V Drain Source Voltage factory

Load Switch and PWM Application MOSFET N Channel MIRACLE POWER MS0009B with 100V Drain Source Voltage

Key Attributes
Model Number: MS0009B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
135A
RDS(on):
5.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
19pF
Pd - Power Dissipation:
179W
Input Capacitance(Ciss):
3.675nF
Output Capacitance(Coss):
578pF
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
MS0009B
Package:
TO-263
Product Description

Product Overview

The MS0009B is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 100V drain-source voltage and a continuous drain current of 135A at 25C case temperature, with a low on-resistance of 4.4m (typ.) at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, with 100% EAS guaranteed. It is suitable for applications such as Load Switches, PWM applications, and Power Management. The device is halogen-free and RoHS-compliant.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Compliance: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 135 A
ID Drain Current-Continuous (TC = 100C) 85 A
IDM Drain Current-Pulsed 540 A
PD Maximum Power Dissipation (TC = 25C) 179 W
EAS Single Pulsed Avalanche Energy 506 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.7 C/W
RJA Thermal Resistance, Junction to Ambient 46 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 100 - - V
IDSS Zero Gate Voltage Drain Current VDS = 100V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 3.0 4.0 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 20A - 4.4 5.8 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 4.2 -
Ciss Input Capacitance VDS = 50V, VGS = 0V, f = 1.0MHz - 3675 - pF
Coss Output Capacitance - 578 - pF
Crss Reverse Transfer Capacitance - 19 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 50V, VGS = 10V, ID = 20A, RGEN = 3.0 - 25 - ns
tr Turn-On Rise Time - 41 - ns
td(off) Turn-Off Delay Time - 78 - ns
tf Turn-Off Fall Time - 24 - ns
Qg Total Gate Charge VDS = 50V, VGS = 0 to 10V, ID = 20A - 46 - nC
Qgs Gate-Source Charge - 16.5 - nC
Qgd Gate-Drain Charge - 14.5 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 135 A
ISM Maximum Pulsed Current - - 540 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 46.3 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 350 - nC

2504151445_MIRACLE-POWER-MS0009B_C47361207.pdf

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