Power MOSFET N Channel 700V 11A MIRACLE POWER MJB11N70 Designed for Flyback and Forward Topology Applications

Product Overview

The MJB11N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It is designed for high-voltage applications, offering a 700V drain-source voltage and a continuous drain current of 11A. This MOSFET is 100% avalanche tested and is suitable for use in single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.

Product Attributes

• Brand: Miracle Technology Co., Ltd.
• Product Type: N-Channel Power MOSFET
• Technology: Advanced Super Junction Technology
• Testing: 100% Avalanche Tested

Technical Specifications

Symbol	Parameter	Test Condition	Min.	Typ.	Max.	Unit
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS	Drain-Source Voltage				700	V
VGS	Gate-Source Voltage				±30	V
ID	Drain Current-Continuous, TC = 25C				11	A
IDM	Drain Current-Pulsed				33	A
PD	Maximum Power Dissipation @ TJ = 25C				83	W
dv/dt	Peak Diode Recovery dv/dt				15	V/ns
EAS	Single Pulsed Avalanche Energy				500	mJ
TJ, TSTG	Operating and Store Temperature Range		-55		150	C
Thermal Characteristics
RJC	Thermal Resistance, Junction to Case			1.5		C/W
RJA	Thermal Resistance, Junction to Ambient			62		C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 10mA	700	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS = 700V, VGS = 0V	-	-	1	µA
IGSS	Forward Gate Body Leakage Current	VDS = 0V, VGS = ±30V	-	-	±100	nA
On Characteristics
VGS(th)	Gate Threshold Voltage	VDS = VGS, ID = 250µA	2.8	-	4.2	V
RDS(on)	Static Drain-Source On-Resistance	VGS = 10V, ID = 5.5A	-	0.34	0.38	Ω
Dynamic Characteristics
Rg	Gate Resistance	f = 1.0MHz	-	11.2	-	Ω
Ciss	Input Capacitance	VDS = 50V, VGS = 0V, f = 10kHz	-	901	-	pF
Coss	Output Capacitance		-	59	-	pF
Crss	Reverse Transfer Capacitance		-	5.3	-	pF
Switching Characteristics
td(on)	Turn-On Delay Time	VDD = 400V, VGS= 13V, ID = 4.8A, RG = 3.4Ω	-	7.2	-	ns
tr	Turn-On Rise Time		-	20.8	-	ns
td(off)	Turn-Off Delay Time		-	29.2	-	ns
tf	Turn-Off Fall Time		-	19.2	-	ns
Qg	Total Gate Charge	VDS = 400V, VGS = 0 to 10V, ID = 4.8A	-	9.5	-	nC
Qgs	Gate-Source Charge		-	1.5	-	-
Qgd	Gate-Drain Charge		-	2.5	-	-
Drain-Source Diode Characteristics
IS	Drain-Source Diode Forward Continuous Current	VGS = 0V	-	-	11	A
ISM	Maximum Pulsed Current	VGS = 0V	-	-	33	A
VSD	Drain-Source Diode Forward Voltage	VGS = 0V, IF = 1A	-	0.74	-	V
Trr	Body Diode Reverse Recovery Time	VR = 400V, IF = 4.8A, dIF/dt = 100A/µs	-	250	-	ns
Qrr	Body Diode Reverse Recovery Charge	VR = 400V, IF = 4.8A, dIF/dt = 100A/µs	-	2.572	-	µC

2504151445_MIRACLE-POWER-MJB11N70_C47361155.pdf