silicon n channel mosfet Minos IRF3205 suitable for synchronous rectification inverter systems and switching
Key Attributes
Model Number:
IRF3205
Product Custom Attributes
Drain To Source Voltage:
55V
Current - Continuous Drain(Id):
110A
Operating Temperature -:
-55℃~+175℃
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
211pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
3.247nF@25V
Pd - Power Dissipation:
210W
Gate Charge(Qg):
146nC@10V
Mfr. Part #:
IRF3205
Package:
TO-220
Product Description
Product Description
The IRF3205 is a silicon N-channel Enhanced MOSFET manufactured using advanced MOSFET technology. This technology significantly reduces conduction losses, improves switching performance, and enhances avalanche energy capabilities. It is an ideal device for synchronous rectification, inverter systems, high-speed switching, and general-purpose applications.
Product Attributes
- Brand: MNS-KX (implied by www.mns-kx.com)
- Certifications: RoHS product
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
| ABSOLUTE RATINGS | ||||||
| VDSS | Drain-to-Source Voltage | 55 | V | |||
| ID | Continuous Drain Current | TC = 25C | 110 | A | ||
| ID | Continuous Drain Current | TC = 100C | 80 | A | ||
| IDM | Pulsed Drain Current(Note1) | 440 | A | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| EAS | Single Pulse Avalanche Energy(Note2) | 1500 | mJ | |||
| IAR | Avalanche Current | 25 | A | |||
| EAR | Repetitive Avalanche Current | 20 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt(Note3) | 5.0 | V/ns | |||
| PD | Power Dissipation | TO-220 | 210 | W | ||
| TJ, Tstg | Operating Junction and Storage Temperature Range | 55 | 175 | |||
| TL | Maximum Temperature for Soldering | 300 | ||||
| Electrical Characteristics (OFF Characteristics) | ||||||
| VDSS | Drain to Source Breakdown Voltage | VGS=0V, ID=250A | 55 | V | ||
| BVDSS/ TJ | Bvdss Temperature Coefficient | ID=250uA, Reference25 | 0.055 | V/ | ||
| IDSS | Drain to Source Leakage Current | VDS =55V, VGS= 0V, Tj = 25 | 1 | A | ||
| IDSS | Drain to Source Leakage Current | VDS =44V, VGS= 0V, Tj = 125 | 10 | A | ||
| IGSS(F) | Gate to Source Forward Leakage | VGS =+20V | 100 | nA | ||
| IGSS(R) | Gate to Source Reverse Leakage | VGS =-20V | 100 | nA | ||
| Electrical Characteristics (ON Characteristics) | ||||||
| RDS(ON) | Drain-to-Source On- Resistance | VGS=10V, ID=40A | 7.2 | 9 | m | |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2 | 4 | V | |
| gfs | Forward Transconductance | VDS=20V, ID=40A(Note4) | 65 | S | ||
| Dynamic Characteristics | ||||||
| Rg | Gate resistance | f = 1.0MHz | 1.7 | |||
| Ciss | Input Capacitance | VGS = 0V VDS = 25V f = 1.0MHz | 3247 | PF | ||
| Coss | Output Capacitance | 781 | PF | |||
| Crss | Reverse Transfer Capacitance | 211 | PF | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Continuous Source Current (Body Diode) | TC=25 C | 110 | A | ||
| ISM | Maximum Pulsed Current (Body Diode) | 440 | A | |||
| VSD | Diode Forward Voltage | IS=62A, VGS=0V | 0.9 | 1.3 | V | |
| Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ID =62A VDD =28V VGS = 10V RG =4.5 | 14 | ns | ||
| tr | Rise Time | 101 | ns | |||
| td(OFF) | Turn-Off Delay Time | 50 | ns | |||
| tf | Fall Time | 65 | ns | |||
| Qg | Total Gate Charge | ID =62A VDD =44V VGS = 10V | 146 | nC | ||
| Qgs | Gate to Source Charge | 10 | ||||
| Qgd | Gate to Drain (Miller)Charge | 17.5 | ||||
| trr | Reverse Recovery Time | IS=62A, Tj = 25C dIF/dt=100A/us, VGS=0V | 69 | ns | ||
| Qrr | Reverse Recovery Charge | 143 | nC | |||
2410122012_Minos-IRF3205_C19189952.pdf
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