Silicon N channel MOSFET Minos MP18N20 designed for switching and avalanche energy in power circuits
Product Description
The MP18N20 is a silicon N-channel Enhanced MOSFET utilizing advanced technology to minimize conduction losses, enhance switching performance, and improve avalanche energy. This transistor is ideal for applications such as Switch Mode Power Supplies (SMPS), high-speed switching, and general-purpose uses.
Product Attributes
- Brand: MNS (Shenzhen Minos)
- Origin: China (Shenzhen)
- Material: Silicon
- Certifications: RoHS
Technical Specifications
| Parameter | MP18N20 (TO-220/TO-251/TO-252) | MPF18N20 (TO-220F) | Unit |
| VDS | 200 | 200 | V |
| ID (Continuous @ TC=25C) | 18 | 18 | A |
| ID (Continuous @ TC=100C) | 11 | 11 | A |
| IDM (Pulsed) | 72 | 72 | A |
| VGS | 30 | 30 | V |
| EAS (Single Pulse Avalanche Energy) | 580 | 580 | mJ |
| dv/dt (Peak Diode Recovery) | 5.0 | 5.0 | V/ns |
| PD (Power Dissipation @ TC=25C) | 130 | 42 | W |
| Derating Factor above 25C | 1.2 | 0.33 | W/ |
| TJ, Tstg (Operating/Storage Temp) | -55 to 150 | -55 to 150 | |
| TL (Max Soldering Temp) | 300 | 300 | |
| RJC (Junction-to-Case) | 0.84 | 3.0 | /W |
| RJA (Junction-to-Ambient) | 62.5 | 62.5 | /W |
| RDS(ON).Typ (VGS=10V, ID=7.5A) | 0.13 | 0.13 | |
| VGS(TH) (Gate Threshold Voltage) | 2.0 - 4.0 | 2.0 - 4.0 | V |
| Ciss (Input Capacitance) | 1320 | 1320 | PF |
| Coss (Output Capacitance) | 450 | 450 | PF |
| Crss (Reverse Transfer Capacitance) | 130 | 130 | PF |
| td(ON) (Turn-on Delay Time) | 15 | 15 | ns |
| Tr (Rise Time) | 52 | 52 | ns |
| td(OFF) (Turn-Off Delay Time) | 46 | 46 | ns |
| tf (Fall Time) | 37 | 37 | ns |
| Qg (Total Gate Charge) | 23 | 23 | nC |
| Qgs (Gate to Source Charge) | 8 | 8 | nC |
| Qgd (Gate to Drain Charge) | 6 | 6 | nC |
| IS (Continuous Source Current) | 18 | 18 | A |
| ISM (Maximum Pulsed Current) | 72 | 72 | A |
| VSD (Diode Forward Voltage) | 1.2 | 1.2 | V |
| Trr (Reverse Recovery Time) | 350 | 350 | ns |
| Qrr (Reverse Recovery Charge) | 3600 | 3600 | nC |
2411120955_Minos-MP18N20_C2980282.pdf
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