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quality Durable NH SBR20L60CT Schottky Barrier Rectifier for Automotive Electronics and Charging Applications factory
quality Durable NH SBR20L60CT Schottky Barrier Rectifier for Automotive Electronics and Charging Applications factory

Durable NH SBR20L60CT Schottky Barrier Rectifier for Automotive Electronics and Charging Applications

Key Attributes
Model Number: SBR20L60CT
Product Custom Attributes
Reverse Leakage Current (Ir):
180A
Non-Repetitive Peak Forward Surge Current:
180A
Diode Configuration:
2 Pair Common Anode
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
530mV
Current - Rectified:
20A
Mfr. Part #:
SBR20L60CT
Package:
TO-220-3L
Product Description

MBR20L60CT Low Vf Schottky Barrier Rectifiers

The MBR20L60CT is a Schottky Barrier Rectifier from Niuhang Electronic Specification Technology Co., Ltd. It features low forward voltage drop (Vf) and high efficiency, making it suitable for applications requiring low power loss and high reliability. Its super low forward voltage drop and high frequency switching speed are key advantages. This rectifier is designed for use in Switch Mode Power Supplies (SMPS), Fast Chargers, LED Driver and Monitor Lighting, and Automotive Electronics and Charging Posts. It is a single-phase, half-wave rectifier rated for 60 Volts and 20 Amperes, available in a TO-220AB package.

Product Attributes

  • Brand: Niuhang Electronic Specification Technology Co., Ltd.
  • Product Line Code: FF
  • Date Code: YWW
  • Internal Code: LLWWF
  • Package: TO-220AB
  • Certifications: RoHS-Compliant, UL-94 ClassV-0 Recognized
  • Material: Molded, Tin Plated Leads

Technical Specifications

ParameterTest ConditionsSymbolRatingsUnit
Maximum Repetitive Peak Reverse VoltageVRRM60V
Maximum RMS VoltageVRMS42V
Maximum DC Blocking VoltageVDC60V
Maximum Average Forward Rectified Current Per DiodeIF(AV)10A
Maximum Average Forward Rectified Current Total deviceIF(AV)20A
Peak Forward Surge Current Per Diode8.3ms Single Half Sine-wave Superimposed On Rate LoadIFSM180A
Current Squared Time Per Diodet< 8.3msI2t134.5A2sec
Maximum Mounting TorqueM3 srewTMM1.1N.m
Instantaneous Forward Voltage Per DiodeTa=25, IF= 10.0 AVF0.53V
Instantaneous Forward Voltage Per DiodeTa=100, IF= 10.0 AVF0.49V
Maximum DC Reverse Current at Rated DC Blocking VoltageTa=25,VR=VRRMIRRM10uA
Maximum DC Reverse Current at Rated DC Blocking VoltageTa=25,VR=VRRMIRRM100uA
Maximum DC Reverse Current at Rated DC Blocking VoltageTa=100,VR=VRRM*80%IRRM1mA
Maximum DC Reverse Current at Rated DC Blocking VoltageTa=100,VR=VRRM*80%IRRM10mA
Typical Junction Capacitance Per Diode4 V,1MHzCJ460pF
Maximum Reverse Recovery TimeIF=0.5A, IR=1.0A, IRR=0.25ATrr0nS
Operating Junction Temperature RangeTJ-55 to 150
Storage Temperature RangeTSTD-55 to 150
Thermal Resistance Junction To AmbientStill Air Environment, With Steady-State, With Ta=25RJA62.5/W
Thermal Resistance Junction-CaseDevice Mounted On 75mm x 45mm x 2.5mm Alu. Heat., With Steady-State, With Ta=25RJC2.0/W

2508201745_NH-SBR20L60CT_C7428110.pdf

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