N Channel Enhancement Mode MOSFET MIRACLE POWER MU2N7002T with 60V Breakdown Voltage and ESD Protection
Key Attributes
Model Number:
MU2N7002T
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
320mA
RDS(on):
2.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
28pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.7nC@0V
Mfr. Part #:
MU2N7002T
Package:
SOT-23
Product Description
Product Overview
The MU2N7002T is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. This device features a 60V breakdown voltage, a low on-resistance of 1.7 (typ.) at VGS = 10V, and very low leakage current in the off condition. It offers ESD protection of 2KV HBM and is suitable for power switching applications, hard switched and high-frequency circuits, and direct logic-level interface with TTL/CMOS.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MOSFET
- Channel Type: N-Channel
- Mode: Enhancement Mode
- Package: SOT-23
- Marking: 7002AXX
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | Tc = 25C unless otherwise noted | - | - | 60 | V |
| VGS | Gate-Source Voltage | Tc = 25C unless otherwise noted | - | - | ±20 | V |
| ID | Drain Current-Continuous, TA =25C | Tc = 25C unless otherwise noted | - | - | 320 | mA |
| IDM | Drain Current-Pulsed | a | - | - | 1200 | mA |
| PD | Maximum Power Dissipation | @ TA =25C | - | - | 350 | mW |
| TSTG | Store Temperature Range | - | -55 | - | 150 | C |
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance Junction-Ambient | - | - | - | 357 | C/W |
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 60V, VGS = 0V | - | - | 1 | µA |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = ±20V | - | - | ±10 | µA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID =250µA | 1.0 | 1.5 | 2.1 | V |
| RDS(on) | Static Drain-Source On- Resistance | b VGS =10V, ID =300mA | - | 1.7 | 2.2 | Ω |
| RDS(on) | Static Drain-Source On- Resistance | b VGS =4.5V,ID =200mA | - | 2.1 | 3.0 | Ω |
| gfs | Forward Transconductance | VDS=15V, ID=250mA | 300 | - | - | mS |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 28 | - | pF |
| Coss | Output Capacitance | - | - | 11 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 4 | - | pF |
| Qg | Total Gate Charge | VDS = 10V, VGS = 4.5V, ID = 300mA | - | 1.7 | - | nC |
| Qgs | Gate-Source Charge | - | - | 0.3 | - | nC |
| Qgd | Gate-Drain(Miller) Charge | - | - | 0.6 | - | nC |
| On Characteristics (Switching) | ||||||
| td(on) | Turn-On Delay Time | VDD=10V,ID=200mA RG=10Ω, VGS =10V | - | 2 | - | ns |
| tr | Turn-On Rise Time | - | - | 5 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 7 | - | ns |
| tf | Turn-Off Fall Time | - | - | 20 | - | ns |
| Drain-Source Diode Characteristics | ||||||
| Is | Maximum Continuous Drain to Source Diode Forward Current | - | - | - | 0.3 | A |
| IsM | Maximum Pulsed Drain to Source Diode Forward Current | - | - | - | 1.2 | A |
| VSD | Diode Forward Voltage | VGS = 0V, ISD = 0.3A | - | - | 1.2 | V |
Notes:
a: Max. current is limited by junction temperature.
b: Pulse test (pulse width≤300µs, duty cycle≤2%).
2408011701_MIRACLE-POWER-MU2N7002T_C34373742.pdf
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