High Voltage N Channel Power MOSFET MIRACLE POWER MPD07N65A with 650V Breakdown and 7A Drain Current
Key Attributes
Model Number:
MPD07N65A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.35Ω@10V,3.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
14pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.089nF
Pd - Power Dissipation:
69W
Output Capacitance(Coss):
100pF
Gate Charge(Qg):
27nC@10V
Mfr. Part #:
MPD07N65A
Package:
TO-252
Product Description
MPD07N65A N-Channel Power MOSFET
The MPD07N65A is an N-Channel Power MOSFET designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 7A, and a low on-resistance of 1.15 (typ.) at VGS = 10V. This MOSFET offers fast switching speeds and low Crss, making it suitable for adapter power supplies, LCD panel power, e-bike chargers, and switching mode power supplies. It is 100% avalanche tested for enhanced reliability.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Model: MPD07N65A
- Type: N-Channel Power MOSFET
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 650 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous, TC =25C | 7 | A | |||
| ID | Drain Current-Continuous, TC =100C | 4 | A | |||
| IDM | Drain Current-Pulsed | 28 | A | |||
| PD | Maximum Power Dissipation @ TJ =25C | 69 | W | |||
| EAS | Single Pulsed Avalanche Energy | 125 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| R JC | Thermal Resistance, Junction-Case | 1.8 | C/W | |||
| R JA | Thermal Resistance Junction-Ambient | 60 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS=VGS, ID =250A | 2 | - | 4 | V |
| RDS(on) | Static Drain-Source On- Resistance | VGS = 10V, ID =3.5A | - | 1.15 | 1.35 | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1089 | - | pF |
| Coss | Output Capacitance | - | 100 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 14 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 325V, ID =7A, RG = 10,VGS=10V | - | 19 | - | ns |
| tr | Turn-On Rise Time | - | 29 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 78 | - | ns | |
| tf | Turn-Off Fall Time | - | 35 | - | ns | |
| Qg | Total Gate Charge | VDS = 520V, ID =7A, VGS = 10V | - | 27 | - | nC |
| Qgs | Gate-Source Charge | - | 6 | - | nC | |
| Qgd | Gate-Drain Charge | - | 11 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| IS | Forward Continuous Current | VGS = 0V | - | - | 7 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 28 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 7A | - | - | 1.4 | V |
| Trr | Body Diode Reverse Recovery Time | IS=7A,VGS=0V, di/dt=100A/us | - | 340 | - | ns |
| Qrr | Reverse Recovery Charge | - | 2900 | - | nC | |
Applications
- Adapter
- LCD Panel Power
- E-Bike Charger
- Switching Mode Power Supply
2410122015_MIRACLE-POWER-MPD07N65A_C17701980.pdf
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