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quality N Channel MOSFET MIRACLE POWER MU4006X Offering Low Gate Charge and High Pulsed Drain Current for Switching factory
quality N Channel MOSFET MIRACLE POWER MU4006X Offering Low Gate Charge and High Pulsed Drain Current for Switching factory

N Channel MOSFET MIRACLE POWER MU4006X Offering Low Gate Charge and High Pulsed Drain Current for Switching

Key Attributes
Model Number: MU4006X
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
RDS(on):
5.6mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Pd - Power Dissipation:
37W
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
MU4006X
Package:
DFN-8(3.3x3.3)
Product Description

Product Overview

The MU4006X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a 40V drain-source voltage and 70A continuous drain current, with a low typical on-resistance of 4.3m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, leveraging advanced trench technology and a 100% EAS guaranteed rating. It is well-suited for load switching, PWM applications, and power management.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Technology: Advanced Trench Technology

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 70 A
ID Drain Current-Continuous TC = 100C 44 A
IDM Drain Current-Pulsed 280 A
PD Maximum Power Dissipation TC = 25C 37 W
EAS Single Pulsed Avalanche Energy 156 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 3.4 C/W
RJA Thermal Resistance, Junction to Ambient 42 C/W
Electrical Characteristics
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 40 - - V
IDSS Zero Gate Voltage Drain Current VDS = 40V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 - 2.5 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 30A - 4.3 5.6 m
RDS(on) Static Drain-Source On- Resistance VGS = 4.5V, ID = 20A - 6.1 7.9 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - TBD -
Ciss Input Capacitance VDS = 20V, VGS = 0V, f = 1.0MHz - 3778 - pF
Coss Output Capacitance - 267 - pF
Crss Reverse Transfer Capacitance - 224 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 20V, VGS = 10V, ID = 30A, RGEN = 3.0 - 12 - ns
tr Turn-On Rise Time - 29 - ns
td(off) Turn-Off Delay Time - 60 - ns
tf Turn-Off Fall Time - 16 - ns
Qg Total Gate Charge VDS = 20V, VGS = 0 to 10V, ID = 30A - 73 - nC
Qgs Gate-Source Charge - 15 - nC
Qgd Gate-Drain Charge - 16 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 70 A
ISM Maximum Pulsed Current - - 280 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 16 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 10 - nC

2504151445_MIRACLE-POWER-MU4006X_C47361186.pdf

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