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quality Surface mount NPN transistor Nexperia MMBT3904 215 suitable for amplification and switching circuits factory
quality Surface mount NPN transistor Nexperia MMBT3904 215 suitable for amplification and switching circuits factory

Surface mount NPN transistor Nexperia MMBT3904 215 suitable for amplification and switching circuits

Key Attributes
Model Number: MMBT3904,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
300MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
MMBT3904,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia MMBT3904 is a high-performance NPN switching transistor designed for general switching and amplification applications. Housed in a compact SOT23 Surface-Mounted Device (SMD) plastic package, this AEC-Q101 qualified component offers a collector current capability of up to 200 mA and a collector-emitter voltage of 40 V. Its PNP complement is the MMBT3906.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Switching Transistor
  • Package Type: SOT23
  • Qualification: AEC-Q101 Qualified
  • PNP Complement: MMBT3906

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 40 V
IC Collector current - - - 200 mA
hFE DC current gain VCE = 1 V; IC = 10 mA; tp 300 s; 0.02; Tamb = 25 C 100 - 300 -
VCBO Collector-base voltage open emitter - - 60 V
VEBO Emitter-base voltage open collector - - 6 V
ICM Peak collector current - - - 200 mA
IBM Peak base current - - - 100 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. - - 500 K/W
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 50 nA
IEBO Emitter-base cut-off current VEB = 6 V; IC = 0 A; Tamb = 25 C - - 50 nA
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 1 mA; Tamb = 25 C - - 200 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 1 mA; Tamb = 25 C 650 - 850 mV
Cc Collector capacitance VCB = 5 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 4 pF
Ce Emitter capacitance VEB = 500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - - 8 pF
fT Transition frequency VCE = 20 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 300 - - MHz
NF Noise figure VCE = 5 V; IC = 100 A; RS = 1 k; f = 10 Hz to 15.7 kHz; Tamb = 25 C - - 5 dB
td Delay time Switching times (between 10% and 90% levels) - - 35 ns
tr Rise time Switching times (between 10% and 90% levels) - - 35 ns
ts Storage time IC = 10 mA; IBon = 1 mA; IBoff = -1 mA; Tamb = 25 C - - 200 ns
tf Fall time IC = 10 mA; IBon = 1 mA; IBoff = -1 mA; Tamb = 25 C - - 50 ns

2410010131_Nexperia-MMBT3904-215_C426835.pdf

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