N Channel MOSFET 650V 20A Low On Resistance Fast Switching MIRACLE POWER MPF20N65 for Power Conversion

Key Attributes
Model Number: MPF20N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
500mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
16pF
Number:
-
Output Capacitance(Coss):
291pF
Input Capacitance(Ciss):
3.059nF
Pd - Power Dissipation:
85W
Gate Charge(Qg):
54.5nC@10V
Mfr. Part #:
MPF20N65
Package:
TO-220F
Product Description

Product Overview

The MPF20N65 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., designed for high-efficiency power applications. It features a 650V breakdown voltage, a continuous drain current of 20A, and a low on-resistance of 0.50 (Max.) at VGS = 10V. Key advantages include low Crss, fast switching speeds, and 100% avalanche testing, making it suitable for adaptors, standby power supplies, and switching power supplies.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Line: MPF Series
  • Technology: Miracle Technology
  • Channel Type: N-Channel
  • Package: TO-220F

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Features
Voltage, Current, On-Resistance VGS = 10V 650V, 20A, 0.50
Low Crss
Fast Switching
100% Avalanche Tested
Applications
Adaptor
Standby Power
Switching Power Supply
Absolute Maximum Ratings (Tc = 25C unless otherwise noted)
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage 30 V
ID Drain Current-Continuous, TC =25C 20 A
ID Drain Current-Continuous, TC =100C 12.5 A
IDM Drain Current-Pulsed 80 A
PD Maximum Power Dissipation @ TJ =25C 85 W
EAS Single Pulsed Avalanche Energy 980 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction-Case 1.47 C/W
RJA Thermal Resistance Junction-Ambient 62.5 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 650 - - V
IDSS Zero Gate Voltage Drain Current VDS = 650V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 30V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID =250A 2 - 4 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID =10A - 0.40 0.50
Dynamic Characteristics
Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz - 3059 - pF
Coss Output Capacitance - 291 - pF
Crss Reverse Transfer Capacitance - 16 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 325V, ID =20A, VGS=10V - 37 - ns
tr Turn-On Rise Time - 70 - ns
td(off) Turn-Off Delay Time - 89 - ns
tf Turn-Off Fall Time - 49 - ns
Gate Charge Characteristics
Qg Total Gate Charge VDS = 325V, ID =20A, VGS = 10V - 54.5 - nC
Qgs Gate-Source Charge - 13.3 - nC
Qgd Gate-Drain Charge - 18.7 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VGS = 0V - - 20 A
ISM Maximum Pulsed Current VGS = 0V - - 80 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.4 V
Trr Body Diode Reverse Recovery Time IS=20A,VGS=0V, di/dt=100A/us - 561 - ns
Qrr Reverse Recovery Charge - 6.9 - uC

2410122015_MIRACLE-POWER-MPF20N65_C17701996.pdf

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