Nexperia PMBS3904 215 transistor designed for low voltage and low current applications in electronics
Key Attributes
Model Number:
PMBS3904,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
180MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBS3904,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia PMBS3904 is an NPN general-purpose transistor designed for low current and low voltage applications. It is ideal for general-purpose switching and amplification, finding use in telephony and professional communication equipment. This transistor is housed in a compact plastic SOT23 package.
Product Attributes
- Brand: Nexperia
- Type: NPN general purpose transistor
- Complementary PNP: PMBS3906
- Package: SOT23 (plastic surface mounted package; 3 leads)
- Marking Code: *O4
- Origin (Marking): Made in Hong Kong (*=p), Made in Malaysia (*=t), Made in China (*=W)
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Max. | Unit |
|---|---|---|---|---|---|
| Limiting Values | |||||
| VCBO | collector-base voltage | open emitter | 60 | V | |
| VCEO | collector-emitter voltage | open base | 40 | V | |
| VEBO | emitter-base voltage | open collector | 6 | V | |
| IC | collector current capability | 100 | mA | ||
| ICM | peak collector current | 200 | mA | ||
| IBM | peak base current | 200 | mA | ||
| Ptot | total power dissipation | Tamb 25 C | 250 | mW | |
| Tstg | storage temperature | -65 | +150 | C | |
| Tj | junction temperature | 150 | C | ||
| Tamb | operating ambient temperature | -65 | +150 | C | |
| Thermal Characteristics | |||||
| Rth(j-a) | thermal resistance from junction to ambient | note 1 | 500 | K/W | |
| Characteristics | |||||
| ICBO | collector cut-off current | IE = 0; VCB = 30 V | 50 | nA | |
| IEBO | emitter cut-off current | IC = 0; VEB = 5 V | 50 | nA | |
| hFE | DC current gain | VCE = 1 V; note 1; IC = 0.1 mA | 40 | ||
| VCE = 1 V; note 1; IC = 1 mA | 70 | ||||
| VCE = 1 V; note 1; IC = 10 mA | 100 | 300 | |||
| VCE = 1 V; note 1; IC = 50 mA | 60 | ||||
| VCEsat | collector-emitter saturation voltage | IC = 10 mA; IB = 1 mA | 200 | mV | |
| VCEsat | collector-emitter saturation voltage | IC = 50 mA; IB = 5 mA | 300 | mV | |
| VBEsat | base-emitter saturation voltage | IC = 10 mA; IB = 1 mA | 650 | 850 | mV |
| VBEsat | base-emitter saturation voltage | IC = 50 mA; IB = 5 mA | 950 | mV | |
| Cc | collector capacitance | IE = ie = 0; VCB = 5 V; f = 1 MHz | 4 | pF | |
| Ce | emitter capacitance | IC = ic = 0; VEB = 0.5 V; f = 1 MHz | 12 | pF | |
| fT | transition frequency | IC = 10 mA; VCE = 20 V; f = 100 MHz | 180 | MHz | |
| F | noise figure | IC = 100 A; VCE = 5 V; RS = 1 k; f = 10 Hz to 15.7 kHz | 5 | dB | |
| Switching times (between 10% and 90% levels); (see Fig.3) | |||||
| ton | turn-on time | ICon = 10 mA; IBon = 1 mA; IBoff = 1 mA; VCC = 3 V; VBB = 1.9 V | 110 | ns | |
| td | delay time | 50 | ns | ||
| tr | rise time | 60 | ns | ||
| toff | turn-off time | 1 | 200 | ns | |
| ts | storage time | 1 | 000 | ns | |
| tf | fall time | 200 | ns | ||
Note 1: Transistor mounted on an FR4 printed-circuit board.
Note 1: Pulse test: tp 300 s; 0.02.
2410010231_Nexperia-PMBS3904-215_C8668.pdf
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