Power Management Device MIRACLE POWER MU3009X N Channel Enhancement Mode MOSFET with Lead Free Design
Product Overview
The MU3009X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for superior performance. It offers a 30V drain-source voltage and a continuous drain current of 30A, with a low typical on-resistance of 6.5m at 10V gate-source voltage. This MOSFET is designed for applications such as load switching, PWM applications, and power management, benefiting from its lead-free construction and excellent RDS(ON) with low gate charge.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Lead Free: Yes
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 30 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 30 | A | |||
| ID | Drain Current-Continuous (TC = 100C) | 19 | A | |||
| IDM | Drain Current-Pulsed | 120 | A | |||
| PD | Maximum Power Dissipation (@ TJ = 25C) | 23 | W | |||
| EAS | Single Pulsed Avalanche Energy | 56 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 5.5 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 22 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A | 30 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 30V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 1.0 | 1.8 | 2.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 25A | - | 6.5 | 8.0 | m |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 4.5V, ID = 15A | - | 9.8 | 12.0 | m |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 15V, VGS = 0V, f = 1MHz | - | 1174 | - | pF |
| Coss | Output Capacitance | - | 162 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 130 | - | pF | |
| On Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 15V, VGS = 10V, ID = 15A, RGEN= 3 | - | 7 | - | ns |
| tr | Turn-On Rise Time | - | 15 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 25 | - | ns | |
| tf | Turn-Off Fall Time | - | 6 | - | ns | |
| Qg | Total Gate Charge | VDS = 15V, VGS = 0 to 10V, ID = 20A | - | 23 | - | nC |
| Qgs | Gate-Source Charge | - | 4.5 | - | - | |
| Qgd | Gate-Drain Charge | - | 5.5 | - | - | |
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | - | - | 30 | A | |
| ISM | Maximum Pulsed Current | - | - | 120 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 30A | - | - | 1.2 | V |
| Trr | Body Diode Reverse Recovery Time | IF = 20A, di/dt = 100A/s | - | 10 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | IF = 20A, di/dt = 100A/s | - | 3 | - | nC |
| Package Information (PDFN3x3) | ||||||
| Symbol | Dimension | Min | Typ | Max | Unit | |
| A | 0.725 | 0.775 | 0.825 | |||
| B | 0.28 | 0.38 | 0.48 | |||
| C | 0.13 | 0.15 | 0.20 | |||
| D | 3.05 | 3.15 | 3.25 | |||
| D1 | 0.10 | |||||
| E | 3.25 | 3.35 | 3.45 | |||
| E1 | 3.0 | 3.1 | 3.2 | |||
| e | 0.60 | 0.65 | 0.70 | |||
| F | 0.25 | 0.30 | 0.35 | |||
| H | 1.63 | 1.73 | 1.83 | |||
| L | 2.35 | 2.45 | 2.55 | |||
2504151445_MIRACLE-POWER-MU3009X_C47361161.pdf
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