Power Management Device MIRACLE POWER MU3009X N Channel Enhancement Mode MOSFET with Lead Free Design

Key Attributes
Model Number: MU3009X
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
130pF
Pd - Power Dissipation:
23W
Input Capacitance(Ciss):
1.174nF
Output Capacitance(Coss):
162pF
Gate Charge(Qg):
23nC@10V
Mfr. Part #:
MU3009X
Package:
PDFN-8L(3.3x3.3)
Product Description

Product Overview

The MU3009X is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd., featuring advanced trench technology for superior performance. It offers a 30V drain-source voltage and a continuous drain current of 30A, with a low typical on-resistance of 6.5m at 10V gate-source voltage. This MOSFET is designed for applications such as load switching, PWM applications, and power management, benefiting from its lead-free construction and excellent RDS(ON) with low gate charge.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Technology: Advanced Trench Technology
  • Mode: N-Channel Enhancement Mode
  • Lead Free: Yes

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous (TC = 25C) 30 A
ID Drain Current-Continuous (TC = 100C) 19 A
IDM Drain Current-Pulsed 120 A
PD Maximum Power Dissipation (@ TJ = 25C) 23 W
EAS Single Pulsed Avalanche Energy 56 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 5.5 C/W
RJA Thermal Resistance, Junction to Ambient 22 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 30 - - V
IDSS Zero Gate Voltage Drain Current VDS = 30V, VGS = 0V - - 1 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 1.0 1.8 2.5 V
RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 25A - 6.5 8.0 m
RDS(on) Static Drain-Source On-Resistance VGS = 4.5V, ID = 15A - 9.8 12.0 m
Dynamic Characteristics
Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1174 - pF
Coss Output Capacitance - 162 - pF
Crss Reverse Transfer Capacitance - 130 - pF
On Characteristics
td(on) Turn-On Delay Time VDD = 15V, VGS = 10V, ID = 15A, RGEN= 3 - 7 - ns
tr Turn-On Rise Time - 15 - ns
td(off) Turn-Off Delay Time - 25 - ns
tf Turn-Off Fall Time - 6 - ns
Qg Total Gate Charge VDS = 15V, VGS = 0 to 10V, ID = 20A - 23 - nC
Qgs Gate-Source Charge - 4.5 - -
Qgd Gate-Drain Charge - 5.5 - -
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current - - 30 A
ISM Maximum Pulsed Current - - 120 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 30A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, di/dt = 100A/s - 10 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, di/dt = 100A/s - 3 - nC
Package Information (PDFN3x3)
Symbol Dimension Min Typ Max Unit
A 0.725 0.775 0.825
B 0.28 0.38 0.48
C 0.13 0.15 0.20
D 3.05 3.15 3.25
D1 0.10
E 3.25 3.35 3.45
E1 3.0 3.1 3.2
e 0.60 0.65 0.70
F 0.25 0.30 0.35
H 1.63 1.73 1.83
L 2.35 2.45 2.55

2504151445_MIRACLE-POWER-MU3009X_C47361161.pdf

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