N Channel Power MOSFET MIRACLE POWER MJF11N70 700V 11A Continuous Drain Current Avalanche Tested
Key Attributes
Model Number:
MJF11N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
11A
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.2V@2250uA
Reverse Transfer Capacitance (Crss@Vds):
5.3pF
Input Capacitance(Ciss):
901pF
Output Capacitance(Coss):
59pF
Pd - Power Dissipation:
31W
Mfr. Part #:
MJF11N70
Package:
TO-220F
Product Description
Product Overview
The MJF11N70 is an N-Channel Power MOSFET from Miracle Technology Co., Ltd., featuring advanced Super Junction Technology for easy gate switching control. It offers a 700V breakdown voltage, 11A continuous drain current, and a typical on-resistance of 0.34. This MOSFET is 100% avalanche tested and is suitable for applications such as single-ended flyback or two-transistor forward topologies, commonly found in PC power supplies, PD adaptors, LCD & PDP TVs, and LED lighting.
Product Attributes
- Brand: Miracle Technology Co., Ltd.
- Product Line: MJF Series
- Technology: Advanced Super Junction Technology
- Testing: 100% Avalanche Tested
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Tc = 25C unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 700 | V | |||
| VGS | Gate-Source Voltage | 30 | V | |||
| ID | Drain Current-Continuous (TC = 25C) | 11 | A | |||
| IDM | Drain Current-Pulsed | 33 | A | |||
| PD | Maximum Power Dissipation (@ TJ = 25C) | 31 | W | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| EAS | Single Pulsed Avalanche Energy | 500 | mJ | |||
| TJ, TSTG | Operating and Store Temperature Range | -55 to 150 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case | 4.0 | C/W | |||
| RJA | Thermal Resistance, Junction to Ambient | 80 | C/W | |||
| Electrical Characteristics (TJ = 25C unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 10mA | 700 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 700V, VGS = 0V | - | - | 1 | A |
| IGSS | Forward Gate Body Leakage Current | VDS = 0V, VGS = 30V | - | - | 100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.8 | - | 4.2 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 5.5A | - | 0.34 | 0.38 | |
| Dynamic Characteristics | ||||||
| Rg | Gate Resistance | f = 1.0MHz | - | 11.2 | - | |
| Ciss | Input Capacitance | VDS = 50V, VGS = 0V, f = 10kHz | - | 901 | - | pF |
| Coss | Output Capacitance | - | 59 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 5.3 | - | pF | |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, VGS= 13V, ID = 4.8A, RG = 3.4 | - | 7.2 | - | ns |
| tr | Turn-On Rise Time | - | 20.8 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 29.2 | - | ns | |
| tf | Turn-Off Fall Time | - | 19.2 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, VGS = 0 to 10V, ID = 4.8A | - | 9.5 | - | nC |
| Qgs | Gate-Source Charge | - | 1.5 | - | ||
| Qgd | Gate-Drain Charge | - | 2.5 | - | ||
| Drain-Source Diode Characteristics | ||||||
| IS | Drain-Source Diode Forward Continuous Current | VGS = 0V | - | - | 11 | A |
| ISM | Maximum Pulsed Current | VGS = 0V | - | - | 33 | A |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IF = 1A | - | 0.74 | - | V |
| Trr | Body Diode Reverse Recovery Time | VR = 400V, IF = 4.8A, dIF/dt = 100A/s | - | 250 | - | ns |
| Qrr | Body Diode Reverse Recovery Charge | VR = 400V, IF = 4.8A, dIF/dt = 100A/s | - | 2.572 | - | C |
2504151445_MIRACLE-POWER-MJF11N70_C47361045.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
