PNP resistor equipped transistor Nexperia PDTA114ET 215 designed for digital automotive applications
Key Attributes
Model Number:
PDTA114ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
13kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA114ET,215
Package:
SOT-23
Product Description
Product Overview
The PDTA114E series comprises PNP resistor-equipped transistors (RETs) designed for digital applications in automotive and industrial segments. These devices are housed in small Surface-Mounted Device (SMD) plastic packages, offering a reduced component count and simplified circuit design due to their built-in bias resistors. They serve as a cost-saving alternative to BC847/857 series in digital applications, ideal for controlling IC inputs and switching loads. The series is AEC-Q101 qualified, ensuring suitability for demanding environments.
Product Attributes
- Brand: NXP Semiconductors
- Technology: PNP Resistor-Equipped Transistor (RET)
- Certifications: AEC-Q101 qualified
- Package Types: Small Surface-Mounted Device (SMD) plastic packages
Technical Specifications
| Model Number | Package Type | NPN Complement | Output Current Capability (IO) | Bias Resistor R1 | Bias Resistor Ratio (R2/R1) | Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|---|
| PDTA114EE | SOT416 (SC-75) | PDTC114EE | -100 mA | 7 k (min) - 13 k (max), Typ 10 k | 0.8 (min) - 1.2 (max), Typ 1.0 | -50 V |
| PDTA114EM | SOT883 (SC-101) | PDTC114EM | -100 mA | 7 k (min) - 13 k (max), Typ 10 k | 0.8 (min) - 1.2 (max), Typ 1.0 | -50 V |
| PDTA114ET | SOT23 (TO-236AB) | PDTC114ET | -100 mA | 7 k (min) - 13 k (max), Typ 10 k | 0.8 (min) - 1.2 (max), Typ 1.0 | -50 V |
| PDTA114EU | SOT323 (SC-70) | PDTC114EU | -100 mA | 7 k (min) - 13 k (max), Typ 10 k | 0.8 (min) - 1.2 (max), Typ 1.0 | -50 V |
Applications
- Digital applications in automotive and industrial segments
- Control of IC inputs
- Switching loads
Pinning Information
| Package Type | Pin 1 | Pin 2 | Pin 3 |
|---|---|---|---|
| SOT23; SOT323; SOT416 | Input (base) | GND (emitter) | Output (collector) |
| SOT883 | Input (base) | GND (emitter) | Output (collector) |
Marking Codes
| Type Number | Marking Code |
|---|---|
| PDTA114EE | 03 |
| PDTA114EM | E5 |
| PDTA114ET | *03 |
| PDTA114EU | *03 |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | Collector-base voltage | open emitter | - | -50 | V |
| VCEO | Collector-emitter voltage | open base | - | -50 | V |
| VEBO | Emitter-base voltage | open collector | - | -10 | V |
| VI | Input voltage | positive | - | +40 | V |
| VI | Input voltage | negative | - | -10 | V |
| IO | Output current | - | - | -100 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms | - | -100 | mA |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114EE (SOT416) | - | 150 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114EM (SOT883) | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114ET (SOT23) | - | 250 | mW |
| Ptot | Total power dissipation | Tamb 25 C; PDTA114EU (SOT323) | - | 200 | mW |
| Tj | Junction temperature | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | +150 | C |
| Tstg | Storage temperature | - | -65 | +150 | C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Typ | Unit |
|---|---|---|---|---|
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA114EE (SOT416) | 830 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA114EM (SOT883) | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA114ET (SOT23) | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient | PDTA114EU (SOT323) | 625 | K/W |
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | Collector-base cut-off current | VCB = -50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A | - | - | -1 | A |
| ICEO | Collector-emitter cut-off current | VCE = -30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | Emitter-base cut-off current | VEB = -5 V; IC = 0 A | - | - | -400 | A |
| hFE | DC current gain | VCE = -5 V; IC = -5 mA | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = -10 mA; IB = -0.5 mA | - | - | -150 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -1.1 | -0.8 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -10 mA | -2.5 | -1.8 | - | V |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1.0 | 1.2 | - |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
Ordering Information
| Type Number | Package Name | Description | Version |
|---|---|---|---|
| PDTA114EE | SC-75 | Plastic surface-mounted package; 3 leads | SOT416 |
| PDTA114EM | SC-101 | Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm | SOT883 |
| PDTA114ET | - | Plastic surface-mounted package; 3 leads | SOT23 |
| PDTA114EU | SC-70 | Plastic surface-mounted package; 3 leads | SOT323 |
Packing Information
| Type Number | Package | Description | Packing Quantity |
|---|---|---|---|
| PDTA114EE | SOT416 | 4 mm pitch, 8 mm tape and reel | 3000 |
| PDTA114EM | SOT883 | 2 mm pitch, 8 mm tape and reel | 10000 |
| PDTA114ET | SOT23 | 4 mm pitch, 8 mm tape and reel | 10000 |
| PDTA114EU | SOT323 | 4 mm pitch, 8 mm tape and reel | 3000 |
2410121732_Nexperia-PDTA114ET-215_C75551.pdf
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