High Frequency Switching MOSFET NH NJS65R280S Featuring Low Gate Charge and Low RDS ON Resistance
Key Attributes
Model Number:
NJS65R280S
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
23A
RDS(on):
280mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.5pF
Number:
1 N-channel
Pd - Power Dissipation:
125W
Input Capacitance(Ciss):
1.6nF@25V
Gate Charge(Qg):
46nC@10V
Mfr. Part #:
NJS65R280S
Package:
TO-252
Product Description
Product Overview
The NJS65R280S is an N-Channel Enhancement Super Junction MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and speed, this MOSFET features low RDS(ON) and low gate charge, making it ideal for high-frequency circuits and switching power supplies. Its high EAS rating ensures reliability, and it is 100% UIS and RG tested. Typical applications include AC/DC converters, adaptors, chargers, LED drives, and high-frequency circuits.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Model ID: NJS65R280S
- Package: TO-252
- Certifications: RoHS COMPLIANT, Pb-Free
- Trademark: NH=Niuhang Trademark
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | Tj Min. | VDS | 650 | -- | -- | V |
| Continuous Drain Current | Ta Min.@Ta | ID | -- | 23 | -- | A |
| Drain-Source On Resistance | Type@10V | RDS(ON) | -- | 200.00 | 280.00 | m |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | -- | VDS | -- | -- | 650 | V |
| Gate-Source Voltage | -- | VGS | -- | -- | 30 | V |
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | -- | 23 | A |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | -- | 15 | A |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 91 | A |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 313 | W |
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | -- | 2.50 | -- | W/ |
| Junction Temperature | -- | TJ | -55 | -- | 150 | |
| Storage Temperature Range | -- | TSTD | -55 | -- | 150 | |
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 35 | A |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 325 V | EAS | -- | -- | 300 | mJ |
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 40.0 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in FR-4 Board With 2oz | RJC | -- | 0.4 | -- | /W |
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 650 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.772 | -- | V/ |
| Drain-Source Leakage Current | VDS= 650 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 11 A,VDS= 15 V | gfs | -- | 16.5 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 3.0 | 3.8 | 4.6 | V |
| Drain-Source On Resistance | ID= 11 A,VGS= 10 V | R DS(ON) | -- | 200.00 | 280.00 | m |
| Drain-Source On Resistance | ID= 11 A,VGS= 4.5 V | R DS(ON) | -- | 230.00 | 375.20 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 10.00 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 1600.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 90.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 1.5 | -- | pF |
| Turn-On Delay Time | VDS= 325 V | t d(on) | -- | 60.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 60.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 140.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 30.0 | -- | ns |
| Total Gate Charge | VDS= 325 V | Q g | -- | 46.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 15.0 | -- | nC |
| Gate-Drain Charge | ID= 11 A | Q gd | -- | 24.5 | -- | nC |
| Max. Diode Forward Cuurent | -- | I S | -- | -- | 23 | A |
| Max. Pulsed Forward Cuurent | -- | I SM | -- | -- | 80 | A |
| Diode Forward Voltage | ID= 11 A,VGS=0V | V SD | -- | 0.86 | 1.2 | V |
| Reverse Recovery Time | ID= 11 A,di/dt= 100 A/us | t rr | -- | 120 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 325 V | Q rr | -- | 0.6 | -- | uC |
| Weight | -- | -- | -- | App. 0.321 Grams | (0.01132 Ounce) | -- |
| Dimensions (TO-252) | A | -- | 6.100 | -- | 7.100 | mm (0.240 - 0.280 in) |
| Dimensions (TO-252) | B | -- | 4.800 | -- | 5.800 | mm (0.189 - 0.228 in) |
| Dimensions (TO-252) | C | -- | 1.950 | -- | 2.550 | mm (0.077 - 0.100 in) |
| Dimensions (TO-252) | D | -- | 0.350 | -- | 0.750 | mm (0.014 - 0.030 in) |
| Dimensions (TO-252) | E | -- | 9.250 | -- | 10.750 | mm (0.364 - 0.423 in) |
| Dimensions (TO-252) | F | -- | 5.600 | -- | 6.600 | mm (0.220 - 0.260 in) |
| Dimensions (TO-252) | G | -- | 2.500 | -- | 3.100 | mm (0.098 - 0.122 in) |
| Dimensions (TO-252) | H | -- | 0.650 | -- | 1.050 | mm (0.026 - 0.041 in) |
| Dimensions (TO-252) | J | -- | 2.100 | -- | 2.500 | mm (0.083 - 0.098 in) |
| Dimensions (TO-252) | L | -- | 1.000 | -- | 1.400 | mm (0.039 - 0.055 in) |
| Dimensions (TO-252) | M | -- | 0.350 | -- | 0.750 | mm (0.014 - 0.030 in) |
2411011351_NH-NJS65R280S_C41784097.pdf
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