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quality PNP switching transistor Nexperia PMBT2907A 215 with AEC Q101 qualification in compact SOT23 package factory
quality PNP switching transistor Nexperia PMBT2907A 215 with AEC Q101 qualification in compact SOT23 package factory

PNP switching transistor Nexperia PMBT2907A 215 with AEC Q101 qualification in compact SOT23 package

Key Attributes
Model Number: PMBT2907A,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBT2907A,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PMBT2907A is a 60V, 600mA PNP switching transistor designed for general-purpose switching and linear amplification applications. It is AEC-Q101 qualified, making it suitable for automotive applications. This transistor is housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP switching transistor
  • Package Type: TO-236AB (SOT23)
  • Qualification: AEC-Q101 qualified
  • Complementary NPN: PMBT2222A

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -60 V
IC Collector current - - - -600 mA
hFE DC current gain VCE = -10 V; IC = -150 mA; Tamb = 25 C 100 - 300 -
VCBO Collector-base voltage open emitter - - -60 V
VEBO Emitter-base voltage open collector - - -5 V
ICM Peak collector current - - - -800 mA
IBM Peak base current single pulse; tp 1 ms - - -200 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air - - 500 K/W
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 C - - -10 nA
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A; Tj = 125 C - - -10 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -50 nA
hFE DC current gain VCE = -10 V; IC = -0.1 mA; Tamb = 25 C 75 - - -
hFE DC current gain VCE = -10 V; IC = -1 mA; Tamb = 25 C 100 - - -
hFE DC current gain VCE = -10 V; IC = -10 mA; Tamb = 25 C 100 - - -
hFE DC current gain VCE = -10 V; IC = -150 mA; Tamb = 25 C 100 - 300 -
hFE DC current gain VCE = -10 V; IC = -500 mA; Tamb = 25 C 50 - - -
VCEsat Collector-emitter saturation voltage IC = -150 mA; IB = -15 mA; Tamb = 25 C - - -400 mV
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 C - - -1.6 V
VBEsat Base-emitter saturation voltage IC = -150 mA; IB = -15 mA; Tamb = 25 C - - -1.3 V
VBEsat Base-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 C - - -2.6 V
td Delay time - - - 12 ns
tr Rise time - - - 30 ns
ton Turn-on time - - - 40 ns
ts Storage time - - - 300 ns
tf Fall time - - - 65 ns
toff Turn-off time IC = -150 mA; IBon = -15 mA; IBoff = 15 mA; Tamb = 25 C - - 365 ns
CC Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 8 pF
CE Emitter capacitance VEB = -2 V; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - - 30 pF
fT Transition frequency VCE = -20 V; IC = -50 mA; f = 100 MHz; Tamb = 25 C 200 - - MHz

2410121952_Nexperia-PMBT2907A-215_C8665.pdf

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