High Speed Switching MOSFET NH NPS7N65S N Channel Enhancement Mode for AC DC Converters and Adaptors
Key Attributes
Model Number:
NPS7N65S
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-85℃~+150℃
RDS(on):
1.2Ω@10V;1.38Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5.5pF
Number:
1 N-channel
Output Capacitance(Coss):
96.2pF
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
1.145nF
Gate Charge(Qg):
24nC
Mfr. Part #:
NPS7N65S
Package:
TO-252
Product Description
Product Overview
The Niuhang NPS7N65S is an N-Channel Enhancement Mode Power MOSFET designed for high-frequency circuits and switching power supplies. It features low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is 100% UIS and RG tested and is suitable for AC/DC converters, adaptors, chargers, and LED drives.
Product Attributes
- Brand: Niuhang
- Trademark: NH
- Product Line Code: FF (subject to actual changes)
- Date Code: YWW (subject to actual changes)
- Internal Code: LLWWF
- Model ID: NPS7N65S
- Package: TO-252
- Certifications: RoHS COMPLIANT, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||
| Drain-Source Voltage | @Tj | VDS | 650 | -- | -- | V | |
| Continuous Drain Current | @Ta | ID | -- | 7 | -- | A | |
| RDS(ON) Type | @10V | RDS(ON) | -- | 1.20 | 1.50 | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Voltage | VDS | -- | -- | 650 | V | ||
| Gate-Source Voltage | VGS | -- | -- | 30 | V | ||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | -- | 7 | -- | A | |
| Continuous Drain Current (Note 1) | Ta= 100 | ID | -- | 4 | -- | A | |
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | -- | -- | 28 | A | |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 104 | W | |
| Power Dissipation Derating Factor | Above 25 | DF | -- | 0.83 | -- | W/ | |
| Junction Temperature | TJ | -55 | -- | 150 | |||
| Storage Temperature Range | TSTD | -55 | -- | 150 | |||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | -- | -- | 37 | A | |
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH | EAS | -- | -- | 350 | mJ | |
| Thermal Characteristcs (Ta=25 Unless Otherwise Specified) | |||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 100.0 | -- | /W | |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 1.2 | -- | /W | |
| Electrical Characteristcs (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 650 | -- | -- | V | |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.772 | -- | V/ | |
| Drain-Source Leakage Current | VDS= 650 V,VGS=0V | I DSS | -- | -- | 1 | uA | |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA | |
| Forward Transconductance | ID= 4 A,VDS= 15 V | gfs | -- | 6.5 | -- | S | |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V | |
| Drain-Source On Resistance | ID= 4 A,VGS= 10 V | R DS(ON) | -- | 1.20 | 1.50 | ||
| Drain-Source On Resistance | ID= 4 A,VGS= 4.5 V | R DS(ON) | -- | 1.38 | 2.01 | ||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 5.70 | -- | ||
| Input Capacitance | VDS= 50 V | C iss | -- | 1145.0 | -- | pF | |
| Output Capacitance | VGS= 0 V | C oss | -- | 96.2 | -- | pF | |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 5.5 | -- | pF | |
| Turn-On Delay Time | VDS= 325 V | t d(on) | -- | 19.0 | -- | ns | |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 21.0 | -- | ns | |
| Turn-Off Delay Time | RG= 10 | t d(off) | -- | 43.0 | -- | ns | |
| Turn-Off Rise Time | t f | -- | 19.0 | -- | ns | ||
| Total Gate Charge | VDS= 325 V | Q g | -- | 24.0 | -- | nC | |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 5.6 | -- | nC | |
| Gate-Drain Charge | ID= 4 A | Q gd | -- | 8.7 | -- | nC | |
| Drain-Source Diode Characteristics And Maximum Ratings | |||||||
| Max. Diode Forward Cuurent | I S | -- | -- | 7 | A | ||
| Max. Pulsed Forward Cuurent | I SM | -- | -- | 25 | A | ||
| Diode Forward Voltage | ID= 4 A,VGS=0V | V SD | -- | 1.08 | 1.5 | V | |
| Reverse Recovery Time | ID= 4 A,di/dt= 100 A/us | t rr | -- | 382 | -- | ns | |
| Reverse Recovery Charge | VGS= 10 V,VDS= 325 V | Q rr | -- | 1991.0 | -- | nC | |
| Weight | |||||||
| Weight | -- | 0.321 | -- | Grams (0.01132 Ounce) | |||
| OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS | |||||||
| Dimension | Min. | Typ. | Max. | Min. | Typ. | Max. | Unit |
| A | 6.100 | -- | 7.100 | 0.240 | -- | 0.280 | mm/Inches |
| B | 4.800 | -- | 5.800 | 0.189 | -- | 0.228 | mm/Inches |
| C | 1.950 | -- | 2.550 | 0.077 | -- | 0.100 | mm/Inches |
| D | 0.350 | -- | 0.750 | 0.014 | -- | 0.030 | mm/Inches |
| E | 9.250 | -- | 10.750 | 0.364 | -- | 0.423 | mm/Inches |
| F | 5.600 | -- | 6.600 | 0.220 | -- | 0.260 | mm/Inches |
| G | 2.500 | -- | 3.100 | 0.098 | -- | 0.122 | mm/Inches |
| H | 0.650 | -- | 1.050 | 0.026 | -- | 0.041 | mm/Inches |
| J | 2.100 | -- | 2.500 | 0.083 | -- | 0.098 | mm/Inches |
| L | 1.000 | -- | 1.400 | 0.039 | -- | 0.055 | mm/Inches |
| M | 0.350 | -- | 0.750 | 0.014 | -- | 0.030 | mm/Inches |
| PACKING INFORMATION | |||||||
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) | ||
| TO-252 | Tape Reel | 34034050 | 5000 | 360x360x260 | 25000 | ||
2505061659_NH-NPS7N65S_C7427691.pdf
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