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quality General Purpose NPN Double Transistor Nexperia BC846S-QX in SOT363 Package for Automotive and Signal factory
quality General Purpose NPN Double Transistor Nexperia BC846S-QX in SOT363 Package for Automotive and Signal factory

General Purpose NPN Double Transistor Nexperia BC846S-QX in SOT363 Package for Automotive and Signal

Key Attributes
Model Number: BC846S-QX
Product Custom Attributes
Current - Collector Cutoff:
5uA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC846S-QX
Package:
TSSOP-6
Product Description

Product Overview

The Nexperia BC846S-Q is an NPN general purpose double transistor housed in a compact SOT363 (SC-88) plastic six-lead package. This integrated solution offers two transistors within a single component, reducing the overall number of components and saving valuable board space. Designed for general purpose switching and small signal amplification, it is qualified according to AEC-Q101 and recommended for automotive applications, ensuring reliability and performance in demanding environments. The design ensures no mutual interference between the transistors.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN general purpose double transistor
  • Package Type: SOT363 (SC-88)
  • Qualification: AEC-Q101
  • Recommended for: Automotive applications

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO Collector-emitter voltage Open base - - 65 V
IC Collector current - - - 100 mA
hFE DC current gain VCE = 5 V; IC = 2 mA; Tamb = 25 C 110 - - -
VCBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 80 - - V
VCEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 65 - - V
VEBO Emitter-base breakdown voltage IC = 0 A; IE = 100 A; Tamb = 25 C 6 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 -
VCEsat Collector-emitter saturation voltage IC = 100 mA; IB = 5 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - - 300 mV
VBEsat Base-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - 770 - mV
VBE Base-emitter voltage VCE = 5 V; IC = 2 mA; Tamb = 25 C 580 - 700 mV
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 1.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
[1] Device mounted on an FR4 PCB, single-sided, 35 m copper, tin-plated and standard footprint.
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 416 K/W
Rth(j-sp) Thermal resistance from junction to solder point - - - 230 K/W
Pinning Information
Pin Symbol Description Graphic symbol
1 E1 Emitter TR1 TR1
2 B1 Base TR1 TR2
3 C2 Collector TR2 E2
4 E2 Emitter TR2 B2
5 B2 Base TR2 C1
6 C1 Collector TR1 B1
Ordering Information
Package Type Number Name Description
TSSOP6 BC846S-Q SOT363 Plastic, surface-mounted package; 6 leads; 0.65 mm pitch; 2.1 mm x 1.25 mm x 0.95 mm body
Marking
Type number Marking code
BC846S-Q 4F% (% = placeholder for manufacturing site code)

2411121145_Nexperia-BC846S-QX_C7507678.pdf

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