Nexperia BCP56 115 NPN Medium Power Transistors SOT223 Package Ideal for MOSFET Drivers and Amplifiers

Name: Nexperia BCP56 115 NPN Medium Power Transistors SOT223 Package Ideal for MOSFET Drivers and Amplifiers
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BCP56,115
Availability: InStock

Key Attributes

Model Number: BCP56,115

Product Custom Attributes

Emitter-Base Voltage(Vebo):

Current - Collector Cutoff:

100nA

Pd - Power Dissipation:

1.35W

Transition Frequency(fT):

180MHz

Type:

NPN

Number:

1 NPN

Current - Collector(Ic):

Collector - Emitter Voltage VCEO:

80V

Operating Temperature:

-55℃~+150℃

Mfr. Part #:

BCP56,115

Package:

SOT-223

Product Description

Nexperia BCP56 Series: 80 V, 1 A NPN Medium Power Transistors

Product Overview

The Nexperia BCP56 series comprises NPN medium power transistors designed for surface-mount applications. These transistors are housed in a SOT223 (SC-73) plastic package and offer high collector current capability, multiple current gain selections, and robust power dissipation. They are suitable for a range of applications including linear voltage regulators, MOSFET drivers, low-side switches, power management, amplifiers, and battery-driven devices.

Product Attributes

Brand: Nexperia
Package Type: SOT223 (SC-73)
Transistor Type: NPN Medium Power

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
VCEO	Collector-emitter voltage	Open base	-	-	80	V
IC	Collector current	-	-	-	1	A
ICM	Peak collector current	Single pulse; tp 1 ms	-	-	2	A
VCBO	Collector-base voltage	Open emitter	-	-	100	V
VEBO	Emitter-base voltage	Open collector	-	-	5	V
IB	Base current	-	-	-	0.3	A
IBM	Peak base current	Single pulse; tp 1 ms	-	-	0.3	A
Ptot	Total power dissipation	Tamb 25 C	-	-	0.65 [1]	W
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-55	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A	100	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A	80	-	-	V
V(BR)EBO	Emitter-base breakdown voltage	IE = 100 A; IC = 0 A	5	-	-	V
ICBO	Collector-base cut-off current	VCB = 30 V; IE = 0 A	-	-	100	nA
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	100	nA
VCEsat	Collector-emitter saturation voltage	IC = 500 mA; IB = 50 mA [1]	-	-	500	mV
VBE	Base-emitter voltage	VCE = 2 V; IC = 500 mA [1]	-	-	1	V
Cc	Collector capacitance	VCB = 10 V; IE = ie = 0 A; f = 1 MHz	-	6	-	pF
fT	Transition frequency	VCE = 5 V; IC = 50 mA; f = 100 MHz	100	180	-	MHz

[1] Pulsed; tp 300 s; 0.02

Note: Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint for Ptot [1].

Ordering Information

Type number	Name	Description	Version
BCP56	BCP56	Plastic, surface-mounted package with increased heatsink; 4 leads	SOT223
BCP56-10	BCP56-10	Plastic, surface-mounted package with increased heatsink; 4 leads	SOT223
BCP56-16	BCP56-16	Plastic, surface-mounted package with increased heatsink; 4 leads	SOT223

Marking

Type number	Marking code
BCP56	BCP56
BCP56-10	BCP56/10
BCP56-16	BCP56/16

Package Outline

SOT223 (SC-73)

Dimensions in mm:

Refer to Figure 9 in the original document for detailed package dimensions.

Soldering Footprint

Refer to Figures 10 and 11 in the original document for Reflow and Wave soldering footprints for SOT223 (SC-73).

2410010332_Nexperia-BCP56-115_C22239.pdf

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Nexperia BCP56 115 NPN Medium Power Transistors SOT223 Package Ideal for MOSFET Drivers and Amplifiers