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quality High Voltage MOSFET MIRACLE POWER MSA002C with 2.2 Milliohm On Resistance and 220A Continuous Current factory
quality High Voltage MOSFET MIRACLE POWER MSA002C with 2.2 Milliohm On Resistance and 220A Continuous Current factory

High Voltage MOSFET MIRACLE POWER MSA002C with 2.2 Milliohm On Resistance and 220A Continuous Current

Key Attributes
Model Number: MSA002C
Product Custom Attributes
Drain To Source Voltage:
110V
Current - Continuous Drain(Id):
220A
RDS(on):
2.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@2250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
31pF
Output Capacitance(Coss):
1.498nF
Input Capacitance(Ciss):
10.38nF
Pd - Power Dissipation:
312.5W
Gate Charge(Qg):
152nC@10V
Mfr. Part #:
MSA002C
Package:
TO-220
Product Description

Product Overview

The MSA002C is an N-Channel Enhancement Mode MOSFET from Miracle Technology Co., Ltd. It features a high voltage rating of 110V and a continuous drain current of 220A, with a low typical on-resistance of 2.2m at VGS = 10V. This MOSFET offers excellent RDS(on) and low gate charge, making it suitable for load switch, PWM applications, and power management. It is 100% EAS guaranteed, halogen-free, and RoHS-compliant.

Product Attributes

  • Brand: Miracle Technology Co., Ltd.
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Certifications: Halogen-free; RoHS-compliant

Technical Specifications

Symbol Parameter Test Condition Min. Typ. Max. Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 110 V
VGS Gate-Source Voltage 20 V
ID Drain Current-Continuous TC = 25C 220 A
ID Drain Current-Continuous TC = 100C 156 A
IDM Drain Current-Pulsed 880 A
PD Maximum Power Dissipation TC = 25C 312.5 W
EAS Single Pulsed Avalanche Energy 1332 mJ
TJ, TSTG Operating and Store Temperature Range -55 150 C
Thermal Characteristics
RJC Thermal Resistance, Junction to Case 0.4 C/W
RJA Thermal Resistance, Junction to Ambient 33 C/W
Electrical Characteristics (TJ = 25C unless otherwise noted)
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250A 110 - - V
IDSS Zero Gate Voltage Drain Current VDS = 110V, VGS = 0V - - 1.0 A
IGSS Forward Gate Body Leakage Current VDS = 0V, VGS = 20V - - 100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250A 2.0 3.0 4.0 V
RDS(on) Static Drain-Source On- Resistance VGS = 10V, ID = 20A - 2.2 2.8 m
Dynamic Characteristics
RG Gate Resistance VDS = VGS = 0V, f = 1.0MHz - 2.8 -
Ciss Input Capacitance VDS = 55V, VGS = 0V, f = 1.0MHz - 10.38 - nF
Coss Output Capacitance - 1498 - pF
Crss Reverse Transfer Capacitance - 31 - pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 55V, VGS = 10V, ID = 20A, RGEN = 3.0 - 44 - ns
tr Turn-On Rise Time - 66 - ns
td(off) Turn-Off Delay Time - 128 - ns
tf Turn-Off Fall Time - 76 - ns
Qg Total Gate Charge VDS = 55V, VGS = 0 to 10V, ID = 20A - 152 - nC
Qgs Gate-Source Charge - 49 - nC
Qgd Gate-Drain Charge - 34 - nC
Drain-Source Diode Characteristics
IS Drain-Source Diode Forward Continuous Current VG = VD = 0V, Force Current - - 220 A
ISM Maximum Pulsed Current - - 880 A
VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 20A - - 1.2 V
Trr Body Diode Reverse Recovery Time IF = 20A, dIF/dt = 100A/s - 100 - ns
Qrr Body Diode Reverse Recovery Charge IF = 20A, dIF/dt = 100A/s - 325 - nC

2504151445_MIRACLE-POWER-MSA002C_C47361109.pdf

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