86--136 6733 2386
quality NPN Resistor Equipped Transistor Nexperia PDTC123JT 215 SOT23 Package AEC Q101 Qualified for Automotive factory
quality NPN Resistor Equipped Transistor Nexperia PDTC123JT 215 SOT23 Package AEC Q101 Qualified for Automotive factory

NPN Resistor Equipped Transistor Nexperia PDTC123JT 215 SOT23 Package AEC Q101 Qualified for Automotive

Key Attributes
Model Number: PDTC123JT,215
Product Custom Attributes
Input Resistor:
2.2kΩ
Resistor Ratio:
26
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC123JT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTC123J series comprises NPN Resistor-Equipped Transistors (RETs) in small Surface-Mounted Device (SMD) plastic packages. These transistors feature built-in bias resistors, reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative to BC847/857 series. Key applications include controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101 qualified
  • Built-in Resistors: R1 = 2.2 k, R2 = 47 k

Technical Specifications

Model Package PNP Complement Output Current Capability R1 Bias Resistor (Input) R2/R1 Bias Resistor Ratio Collector-Emitter Voltage (VCEO)
PDTC123JE SOT416 (SC-75) PDTA123JE 100 mA 2.2 k (Typ) 21 (Typ) 50 V
PDTC123JM SOT883 (SC-101) PDTA123JM
PDTC123JT SOT23 (TO-236AB) PDTA123JT
PDTC123JU SOT323 (SC-70) PDTA123JU
Parameter Conditions Min Typ Max Unit
Collector-Base Voltage (VCBO) Open emitter - - 50 V
Collector-Emitter Voltage (VCEO) Open base - - 50 V
Emitter-Base Voltage (VEBO) Open collector - - 10 V
Input Voltage (VI) Positive - - +12 V
Input Voltage (VI) Negative - - -5 V
Output Current (IO) - - - 100 mA
Peak Collector Current (ICM) Single pulse; tp 1 ms - - 100 mA
Junction Temperature (Tj) - - - 150 C
Storage Temperature (Tstg) - -65 - +150 C
DC Current Gain (hFE) VCE = 5 V; IC = 10 mA 100 - -
Collector-Base Cut-off Current (ICBO) VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
Collector-Emitter Cut-off Current (ICEO) VCE = 30 V; IB = 0 A; Tamb = 25 C - - 1 A
Emitter-Base Cut-off Current (IEBO) VEB = 5 V; IC = 0 A; Tamb = 25 C - - 180 A
Collector Capacitance (Cc) VCB = 10 V; IE = 0 A; f = 1 MHz - - 2.5 pF
Transition Frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz - 230 - MHz

2410121813_Nexperia-PDTC123JT-215_C406040.pdf

Related Products
quality Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic factory
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
quality Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads factory
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
quality High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics factory
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
quality Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits factory
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.