Nexperia BC847 215 NPN Transistor in SOT23 Package Suitable for Amplification and Switching Circuits
Key Attributes
Model Number:
BC847,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC847,215
Package:
SOT-23
Product Description
Product Overview
The Nexperia BC847x series comprises NPN general-purpose transistors designed for versatile switching and amplification applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted plastic packages, offering three distinct gain selections to accommodate various design requirements. With a collector-emitter voltage of 45 V and a collector current of 100 mA, they provide reliable performance for general-purpose electronic circuits.
Product Attributes
- Brand: Nexperia
- Package Type: SOT23 (TO-236AB)
- Material: Plastic
- Type: NPN General-Purpose Transistor
Technical Specifications
| Model | Package Type | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | DC Current Gain (hFE) | PNP Complement |
|---|---|---|---|---|---|
| BC847 | SOT23 (TO-236AB) | 45 V | 100 mA | 110 - 800 | BC857 |
| BC847A | SOT23 (TO-236AB) | 45 V | 100 mA | 110 - 220 | BC857A |
| BC847B | SOT23 (TO-236AB) | 45 V | 100 mA | 200 - 450 | BC857B |
| BC847C | SOT23 (TO-236AB) | 45 V | 100 mA | 420 - 800 | BC857C |
Key Characteristics (Tamb = 25 C unless otherwise specified)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 45 | V |
| IC | Collector current | - | - | - | 100 | mA |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 6 | V |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 200 | mA |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C | - | - | 250 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| V(BR)CES | Collector-emitter breakdown voltage | IC = 2 mA; VBE = 0 A | 45 | - | - | V |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | 100 | - | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 1.5 | pF |
| Ce | Emitter capacitance | VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz | - | 11 | - | pF |
Package Outline
SOT23 (TO-236AB)
Dimensions in mm:
- Length: 2.8 to 3.0
- Width: 2.1 to 2.5
- Height: 0.9 to 1.4
- Lead pitch: 0.38 to 0.48
2410010302_Nexperia-BC847-215_C130417.pdf
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