Nexperia PUMH20 115 NPN resistor equipped transistor for low current peripheral driving applications
Key Attributes
Model Number:
PUMH20,115
Product Custom Attributes
Input Resistor:
2.86kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH20,115
Package:
SOT-363
Product Description
Product Overview
The PEMH20 and PUMH20 are NPN/NPN resistor-equipped transistors designed to simplify circuit design and reduce component count. Featuring built-in bias resistors (R1 = 2.2 k, R2 = 2.2 k), these devices are ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. They offer reduced pick-and-place costs and are available in SOT666 and SOT363 packages.
Product Attributes
- Brand: NXP Semiconductors
- Type: NPN/NPN resistor-equipped transistors
- Bias Resistor R1: 2.2 k
- Bias Resistor R2: 2.2 k
Technical Specifications
| Type Number | Package | NPN/PNP Complement | PNP/PNP Complement | JEITA | Marking Code |
|---|---|---|---|---|---|
| PEMH20 | SOT666 | PEMD20 | PEMB20 | - | 6K |
| PUMH20 | SOT363 (SC-88) | PUMD20 | PUMB20 | - | H7* |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Quick Reference Data | ||||||
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| IO | Output current (DC) | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| Limiting values | ||||||
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | positive | - | - | +12 | V |
| VI | Input voltage | negative | - | - | 10 | V |
| IO | Output current (DC) | - | - | - | 100 | mA |
| ICM | Peak collector current | - | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C, SOT363 | - | - | 200 | mW |
| Tamb 25 C, SOT666 | - | - | 200 | mW | ||
| Tstg | Storage temperature | - | -65 | - | +150 | C |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | +150 | C |
| Ptot | Total power dissipation (per device) | Tamb 25 C, SOT363 | - | - | 300 | mW |
| Tamb 25 C, SOT666 | - | - | 300 | mW | ||
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air | SOT363 | - | - | 625 | K/W |
| SOT666 | - | - | 625 | K/W | ||
| Rth(j-a) | Thermal resistance from junction to ambient in free air (per device) | SOT363 | - | - | 416 | K/W |
| SOT666 | - | - | 416 | K/W | ||
| Characteristics | ||||||
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 50 | A | ||
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 2 | mA |
| hFE | DC current gain | VCE = 5 V; IC = 20 mA | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 1 mA | - | 1.2 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA | 2 | 1.6 | - | V |
| R1 | Bias resistor 1 (input) | - | 1.54 | 2.2 | 2.86 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
Applications
- Low current peripheral driver
- Control of IC inputs
- Replacement of general-purpose transistors in digital applications
2410121742_Nexperia-PUMH20-115_C455006.pdf
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