NPN resistor equipped transistor Nexperia PDTC144ET215 offering AEC Q101 qualification for automotive
Key Attributes
Model Number:
PDTC144ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC144ET,215
Package:
SOT-23
Product Description
Nexperia PDTC144E Series NPN Resistor-Equipped Transistors
Product Overview
The Nexperia PDTC144E series comprises NPN resistor-equipped transistors (RETs) in surface-mounted device (SMD) plastic packages. These transistors feature built-in bias resistors (R1 = 47 k, R2 = 47 k), reducing component count and simplifying circuit design. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for digital applications in automotive and industrial segments. The PDTC144E series serves as a cost-saving alternative to BC847/857 series in digital applications, enabling control of IC inputs and switching of loads.
Product Attributes
- Brand: Nexperia
- Type: NPN Resistor-Equipped Transistor (RET)
- Configuration: Built-in bias resistors (R1 = 47 k, R2 = 47 k)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Type Number | Package | Package Configuration | Output Current (IO) | Collector-Emitter Voltage (VCEO) | Bias Resistor R1 (Input) | Bias Resistor Ratio R2/R1 |
|---|---|---|---|---|---|---|
| PDTC144EE | SOT416 (SC-75) | ultra small | 100 mA | 50 V | 33 k - 61 k (47 k Typ) | 0.8 - 1.2 (1 Typ) |
| PDTC144EM | SOT883 (SC-101) | leadless ultra small | 100 mA | 50 V | 33 k - 61 k (47 k Typ) | 0.8 - 1.2 (1 Typ) |
| PDTC144ET | SOT23 (TO-236AB) | small | 100 mA | 50 V | 33 k - 61 k (47 k Typ) | 0.8 - 1.2 (1 Typ) |
| PDTC144EU | SOT323 (SC-70) | very small | 100 mA | 50 V | 33 k - 61 k (47 k Typ) | 0.8 - 1.2 (1 Typ) |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCBO | Collector-base voltage | open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | open collector | - | - | 10 | V |
| VI | Input voltage | positive | - | - | 40 | V |
| VI | Input voltage | negative | - | - | -10 | V |
| IO | Output current | - | - | - | 100 | mA |
| ICM | Peak collector current | single pulse; tp 1 ms | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C; PDTC144EE (SOT416) | - | - | 150 | mW |
| Tamb 25 C; PDTC144EM (SOT883) | - | - | 250 | mW | ||
| Tamb 25 C; PDTC144ET (SOT23) | - | - | 250 | mW | ||
| Tamb 25 C; PDTC144EU (SOT323) | - | - | 200 | mW | ||
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | PDTC144EE (SOT416) | - | - | 830 | K/W |
| PDTC144EM (SOT883) | - | - | 500 | K/W | ||
| PDTC144ET (SOT23) | - | - | 500 | K/W | ||
| PDTC144EU (SOT323) | - | - | 625 | K/W | ||
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A | ||
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 90 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 80 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 0.8 | 1.2 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 2 mA | 1.6 | 3 | - | V |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
2410311233_Nexperia-PDTC144ET-215_C168868.pdf
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