NIKO-SEM PA910BD N-Channel Enhancement Mode Field Effect Transistor for Applications TO-252 Package
Key Attributes
Model Number:
PA910BD
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
8.1A
Operating Temperature -:
-55℃~+175℃
RDS(on):
190mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2.3V
Reverse Transfer Capacitance (Crss@Vds):
21pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
306pF@25V
Pd - Power Dissipation:
15W
Gate Charge(Qg):
8.6nC@10V
Mfr. Part #:
PA910BD
Package:
TO-252-2
Product Description
Product Overview
The PA910BD is an N-Channel Enhancement Mode Field Effect Transistor from NIKO-SEM, designed for high-performance applications. It features a TO-252 package and is Halogen-Free & Lead-Free, making it suitable for environmentally conscious designs. This transistor offers robust performance with key parameters like a 100V breakdown voltage, low on-resistance, and significant current handling capabilities.
Product Attributes
- Brand: NIKO-SEM
- Model: PA910BD
- Package: TO-252
- Certifications: Halogen-Free & Lead-Free
- Transistor Type: N-Channel Enhancement Mode Field Effect Transistor
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC = 25 C | 8.1 | A | ||
| Continuous Drain Current | ID | TC = 100 C | 5.7 | A | ||
| Pulsed Drain Current | IDM | 12 | A | |||
| Avalanche Current | IAs | 2.8 | A | |||
| Avalanche Energy | EAS | L = 1mH | 4 | mJ | ||
| Power Dissipation | PD | TC = 25 C | 30 | W | ||
| Power Dissipation | PD | TC = 100 C | 15 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 175 | C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Case | RJC | 5 | C / W | |||
| Junction-to-Ambient | RJA | 62.5 | C / W | |||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 100 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.3 | 1.9 | 2.3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = 20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V | 1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 80V, VGS = 0V, TJ = 100 C | 10 | A | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 10V, ID = 3A | 143 | 190 | m | |
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 3A | 153 | 205 | m | |
| Forward Transconductance | gfs | VDS = 5V, ID = 3A | 13 | S | ||
| Input Capacitance | Ciss | VGS = 0V, VDS = 25V, f = 1MHz | 306 | pF | ||
| Output Capacitance | Coss | VGS = 0V, VDS = 25V, f = 1MHz | 35 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS = 0V, VDS = 25V, f = 1MHz | 21 | pF | ||
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 2.2 | |||
| Total Gate Charge | Qg | VDS = 50V, VGS = 10V, ID = 3A | 8.6 | nC | ||
| Gate-Source Charge | Qgs | VDS = 50V, VGS = 10V, ID = 3A | nC | |||
| Gate-Drain Charge | Qgd | VDS = 50V, VGS = 10V, ID = 3A | 3.6 | nC | ||
| Turn-On Delay Time | td(on) | VDD = 50V, ID 3A, VGS = 10V, RGS = 6 | 10 | nS | ||
| Rise Time | tr | VDD = 50V, ID 3A, VGS = 10V, RGS = 6 | 20 | nS | ||
| Turn-Off Delay Time | td(off) | VDD = 50V, ID 3A, VGS = 10V, RGS = 6 | 75 | nS | ||
| Fall Time | tf | VDD = 50V, ID 3A, VGS = 10V, RGS = 6 | 22 | nS | ||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 7.4 | A | |||
| Forward Voltage | VSD | IF = 3A, VGS = 0V | 1.4 | V | ||
| Reverse Recovery Time | trr | IF = 3A, dI/dt=100A/s | 19 | nS | ||
| Reverse Recovery Charge | Qrr | IF = 3A, dI/dt=100A/s | 10 | nC | ||
2411220120_NIKO-SEM-PA910BD_C532968.pdf
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