Durable glass passivated junction bridge rectifier MSKSEMI GBU1210-MS with 94V 0 flammability rating
Key Attributes
Model Number:
GBU1210-MS
Product Custom Attributes
Mfr. Part #:
GBU1210-MS
Package:
GBU
Product Description
Product Overview
The GBU12005-MS THRU GBU1210-MS series are glass passivated junction bridge rectifiers designed for printed circuit board applications. They offer high forward surge current capability and low reverse leakage, with a plastic body carrying Underwriters Laboratory Flammability Classification 94V-0. These rectifiers are suitable for high-temperature soldering up to 260C for 10 seconds at the terminals.
Product Attributes
- Brand: MSKSEMI
- Origin: Incorporated
- Material: Molded plastic body, Solder plated terminals
- Certifications: Underwriters Laboratory Flammability Classification 94V-0
Technical Specifications
| Parameter | Symbol | GBU12005-MS | GBU1201-MS | GBU1202-MS | GBU1204-MS | GBU1206-MS | GBU1208-MS | GBU1210-MS | Units |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward rectified current with heatsink | I(AV) | 12.0 | A | ||||||
| Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load | IFSM | 240.0 | A | ||||||
| Rating for fusing (t=8.3ms, Ta=25) | It | 239 | As | ||||||
| Maximum instantaneous forward voltage at 12.0A | VF | 1.10 | V | ||||||
| Maximum DC reverse current at rated DC blocking voltage TA=25 | IR | 2.0 | uA | ||||||
| Maximum DC reverse current at rated DC blocking voltage TA=125 | IR | 200 | uA | ||||||
| Typical junction capacitance (Note 1) | CJ | 58.0 | pF | ||||||
| Typical thermal resistance | RJA | 25.0 | C/W | ||||||
| Operating junction and storage temperature range | TJ,TSTG | -55 to +150 | C | ||||||
2510301055_MSKSEMI-GBU1210-MS_C51928021.pdf
Related Products
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
YANGJIE MG400HF12MIC2 IGBT module featuring fast switching speeds and low stray inductance for power supplies
Product OverviewThe MG400HF12MIC2 is a high-power IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient for enhanced reliability. The module offers fast ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
