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quality Digital Transistor PDTB123YT 215 Nexperia PNP Resistor Equipped Device with Simplified Circuit Design factory
quality Digital Transistor PDTB123YT 215 Nexperia PNP Resistor Equipped Device with Simplified Circuit Design factory

Digital Transistor PDTB123YT 215 Nexperia PNP Resistor Equipped Device with Simplified Circuit Design

Key Attributes
Model Number: PDTB123YT,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
2.86kΩ
Resistor Ratio:
5
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTB123YT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTB123YT is a PNP Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It offers a 500 mA output current capability and features built-in bias resistors (R1 = 2.2 k, R2 = 10 k) that simplify circuit design and reduce component count. This device serves as a cost-saving alternative for BC807 series in digital applications and is suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP Resistor-Equipped Transistor (RET)
  • Package Type: SOT23 (TO-236AB)
  • Complementary NPN: PDTD123YT

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -50 V
IO Output current - - -500 mA
R1 Bias resistor 1 (input) 1.54 2.2 2.86 k
R2/R1 Bias resistor ratio Tamb = 25 C 4.1 4.55 5
VCBO Collector-base voltage open emitter - - -50 V
VEBO Emitter-base voltage open collector - - -5 V
VI Input voltage positive - 5 - V
VI Input voltage negative - -20 - V
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - 150 C
Tamb Ambient temperature -65 - 150 C
Tstg Storage temperature -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
ICBO Collector-base cut-off current VCB = -40 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICEO Collector-emitter cut-off current VCB = -50 V; IE = 0 A; Tamb = 25 C - - -100 nA
ICEO Collector-emitter cut-off current VCE = -50 V; IB = 0 A; Tamb = 25 C - - -0.5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -0.65 mA
hFE DC current gain VCE = -5 V; IC = -50 mA; Tamb = 25 C 70 - -
VCEsat Collector-emitter saturation voltage IC = -50 mA; IB = -2.5 mA; Tamb = 25 C - - -300 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A; Tamb = 25 C -0.4 -0.6 -1 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA; Tamb = 25 C -0.5 -1 -1.4 V
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 100 MHz; Tamb = 25 C - 11 - pF

2410121943_Nexperia-PDTB123YT-215_C454996.pdf

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