NPN Resistor Equipped Transistor PDTC144EU QX by Nexperia for Automotive and Industrial Applications
Product Overview
The PDTC144EU-Q is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick and place costs. This device offers a 100 mA output current capability and is qualified according to AEC-Q101, making it suitable for automotive applications. It serves as a cost-saving alternative for BC847-Q series in digital applications, and is ideal for controlling IC inputs and switching loads.
Product Attributes
- Brand: Nexperia
- Product Type: NPN Resistor-Equipped Transistor (RET)
- Complementary PNP: PDTA144EU
- Package Type: SC-70 (SOT323)
- Qualification: AEC-Q101
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | [1] | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage | Positive | - | - | 40 | V |
| VI | Input voltage | Negative | -10 | - | - | V |
| IO | Output current | - | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 200 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Rth(j-a) | Thermal resistance junction to ambient | [1] | - | - | 625 | K/W |
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 90 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 80 | - | - | |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.8 | 1.2 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 2 mA; Tamb = 25 C | 1.6 | - | 3 | V |
| R1 | Bias resistor 1 (input) | [1] | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | [1] | 0.8 | 1 | 1.2 | |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] | - | 230 | - | MHz |
| R1 | Bias resistor 1 (input) | Test conditions | 47 | k | ||
| R2 | Bias resistor 2 | Test conditions | 47 | k |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
[2] Characteristics of built-in transistor.
2411121145_Nexperia-PDTC144EU-QX_C7508642.pdf
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