Double resistor equipped transistor Nexperia PQMD13Z designed for low current applications and automotive
Key Attributes
Model Number:
PQMD13Z
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PQMD13Z
Package:
SOT1216
Product Description
Product Overview
The Nexperia PQMD13 is a series of NPN/PNP double Resistor-Equipped Transistors (RET) designed for low-current peripheral driving and control of IC inputs. These transistors feature built-in bias resistors (R1 = 4.7 k, R2 = 47 k), simplifying circuit design and reducing component count. Their ultra-small DFN1010B-6 (SOT1216) package with a low profile of 0.37 mm minimizes board space and reduces pick-and-place costs. The PQMD13 series is AEC-Q101 qualified, making it suitable for automotive applications. They can replace general-purpose transistors in digital applications and are ideal for mobile device integration.
Product Attributes
- Brand: Nexperia
- Type: NPN/PNP double Resistor-Equipped Transistors (RET)
- Package Type: DFN1010B-6 (SOT1216)
- Certifications: AEC-Q101 qualified
- Built-in Resistors: R1 = 4.7 k, R2 = 47 k
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor; for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | Tamb = 25 C | 8 | 10 | 12 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 5 | V |
| VI | Input voltage | TR1; positive | - | - | 30 | V |
| VI | Input voltage | TR1; negative | - | -5 | - | V |
| VI | Input voltage | TR2; positive | - | - | 5 | V |
| VI | Input voltage | TR2; negative | - | -30 | - | V |
| ICM | Peak collector current | tp 1 ms; single pulse | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 230 | mW |
| Per device | ||||||
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 350 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -55 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance junction to ambient (free air) [1] | - | - | - | 543 | K/W |
| Rth(j-a) | Thermal resistance junction to ambient (free air) [1] | Per device | - | - | 357 | K/W |
| Characteristics | ||||||
| Per transistor; for the PNP transistor with negative polarity | ||||||
| ICBO | Collector-base cut-off current (emitter open) | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current (base open) | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current (base open) | VCE = 30 V; IB = 0 A; Tamb = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current (collector open) | VEB = 5 V; IC = 0 A; Tamb = 25 C | - | - | 170 | A |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA; Tamb = 25 C | 100 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 5 mA; IB = 0.25 mA; Tamb = 25 C | - | - | 100 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.6 | 0.5 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 5 mA; Tamb = 25 C | 1.3 | 0.9 | - | V |
| R1 | Bias resistor 1 | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | Bias resistor ratio | Tamb = 25 C | 8 | 10 | 12 | - |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; f = 1 MHz; Tamb = 25 C; TR1 (NPN) | - | - | 2.5 | pF |
| Cc | Collector capacitance | VCB = -10 V; IE = 0 A; f = 1 MHz; Tamb = 25 C; TR2 (PNP) | - | - | 3 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C; TR1 (NPN) [2] | - | 230 | - | MHz |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C; TR2 (PNP) [2] | - | 180 | - | MHz |
| Package outline | ||||||
| Package | DFN1010B-6 (SOT1216) | Dimensions | 0.95 x 1.05 mm | - | - | - |
| Package Height | - | - | - | - | 0.37 | mm |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Characteristics of built-in transistor.
2410121947_Nexperia-PQMD13Z_C547311.pdf
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