Integrated bias resistor PNP transistor RET Nexperia PDTA143XU 115 for digital switching applications

Key Attributes
Model Number: PDTA143XU,115
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
2.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA143XU,115
Package:
SOT-323
Product Description

Product Overview

The Nexperia PDTA143X series comprises PNP resistor-equipped transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. These transistors feature integrated bias resistors, reducing component count and simplifying circuit design, leading to lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in digital applications. Key applications include control of IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101

Technical Specifications

Type Number Package NPN Complement Package Configuration Output Current Capability (IO) R1 Bias Resistor (Input) R2/R1 Bias Resistor Ratio Collector-Emitter Voltage (VCEO)
PDTA143XE SOT416 (SC-75) PDTC143XE ultra small -100 mA 3.3 k to 6.1 k (Typ. 4.7 k) 1.7 to 2.6 (Typ. 2.1) -50 V
PDTA143XM SOT883 (SC-101) PDTC143XM leadless ultra small -100 mA 3.3 k to 6.1 k (Typ. 4.7 k) 1.7 to 2.6 (Typ. 2.1) -50 V
PDTA143XT SOT23 (TO-236AB) PDTC143XT small -100 mA 3.3 k to 6.1 k (Typ. 4.7 k) 1.7 to 2.6 (Typ. 2.1) -50 V
PDTA143XU SOT323 (SC-70) PDTC143XU very small -100 mA 3.3 k to 6.1 k (Typ. 4.7 k) 1.7 to 2.6 (Typ. 2.1) -50 V

Pinning Information

Package Pin 1 Pin 2 Pin 3
SOT23; SOT323; SOT416 input (base) GND (emitter) output (collector)
SOT883 input (base) GND (emitter) output (collector)

Ordering Information

Type Number Package Name Description Version
PDTA143XE SC-75 plastic surface-mounted package; 3 leads SOT416
PDTA143XM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm SOT883
PDTA143XT - plastic surface-mounted package; 3 leads SOT23
PDTA143XU SC-70 plastic surface-mounted package; 3 leads SOT323

Marking Codes

Type Number Marking Code
PDTA143XE 35
PDTA143XM DN
PDTA143XT *31
PDTA143XU *46

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base - -50 V
VEBO emitter-base voltage open collector - -7 V
VI input voltage positive - +7 V
VI input voltage negative - -20 V
IO output current - - -100 mA
ICM peak collector current single pulse; tp 1 ms - -100 mA
Ptot total power dissipation Tamb 25 C, PDTA143XE (SOT416) - 150 mW
Ptot total power dissipation Tamb 25 C, PDTA143XM (SOT883) - 250 mW
Ptot total power dissipation Tamb 25 C, PDTA143XT (SOT23) - 250 mW
Ptot total power dissipation Tamb 25 C, PDTA143XU (SOT323) - 200 mW
Tj junction temperature - - 150 C
Tamb ambient temperature - -65 +150 C
Tstg storage temperature - -65 +150 C

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from junction to ambient in free air, PDTA143XE (SOT416) - - 830 K/W
Rth(j-a) thermal resistance from junction to ambient in free air, PDTA143XM (SOT883) - - 500 K/W
Rth(j-a) thermal resistance from junction to ambient in free air, PDTA143XT (SOT23) - - 500 K/W
Rth(j-a) thermal resistance from junction to ambient in free air, PDTA143XU (SOT323) - - 625 K/W

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - -100 nA
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - -1 A
ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - -5 A
IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - -600 A
hFE DC current gain VCE = 5 V; IC = 10 mA 50 - -
VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - -100 mV
VI(off) off-state input voltage VCE = 5 V; IC = 100 A - -0.9 -0.3 V
VI(on) on-state input voltage VCE = 0.3 V; IC = 20 mA -2.5 -1.5 - V
R1 bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 bias resistor ratio - 1.7 2.1 2.6
Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 180 - MHz

2410121742_Nexperia-PDTA143XU-115_C503462.pdf

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