Integrated bias resistor PNP transistor RET Nexperia PDTA143XU 115 for digital switching applications
Product Overview
The Nexperia PDTA143X series comprises PNP resistor-equipped transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. These transistors feature integrated bias resistors, reducing component count and simplifying circuit design, leading to lower pick-and-place costs. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in digital applications. Key applications include control of IC inputs and switching loads.
Product Attributes
- Brand: Nexperia
- Type: PNP Resistor-Equipped Transistor (RET)
- Qualification: AEC-Q101
Technical Specifications
| Type Number | Package | NPN Complement | Package Configuration | Output Current Capability (IO) | R1 Bias Resistor (Input) | R2/R1 Bias Resistor Ratio | Collector-Emitter Voltage (VCEO) |
|---|---|---|---|---|---|---|---|
| PDTA143XE | SOT416 (SC-75) | PDTC143XE | ultra small | -100 mA | 3.3 k to 6.1 k (Typ. 4.7 k) | 1.7 to 2.6 (Typ. 2.1) | -50 V |
| PDTA143XM | SOT883 (SC-101) | PDTC143XM | leadless ultra small | -100 mA | 3.3 k to 6.1 k (Typ. 4.7 k) | 1.7 to 2.6 (Typ. 2.1) | -50 V |
| PDTA143XT | SOT23 (TO-236AB) | PDTC143XT | small | -100 mA | 3.3 k to 6.1 k (Typ. 4.7 k) | 1.7 to 2.6 (Typ. 2.1) | -50 V |
| PDTA143XU | SOT323 (SC-70) | PDTC143XU | very small | -100 mA | 3.3 k to 6.1 k (Typ. 4.7 k) | 1.7 to 2.6 (Typ. 2.1) | -50 V |
Pinning Information
| Package | Pin 1 | Pin 2 | Pin 3 |
|---|---|---|---|
| SOT23; SOT323; SOT416 | input (base) | GND (emitter) | output (collector) |
| SOT883 | input (base) | GND (emitter) | output (collector) |
Ordering Information
| Type Number | Package Name | Description | Version |
|---|---|---|---|
| PDTA143XE | SC-75 | plastic surface-mounted package; 3 leads | SOT416 |
| PDTA143XM | SC-101 | leadless ultra small plastic package; 3 solder lands; body 1.0 0.6 0.5 mm | SOT883 |
| PDTA143XT | - | plastic surface-mounted package; 3 leads | SOT23 |
| PDTA143XU | SC-70 | plastic surface-mounted package; 3 leads | SOT323 |
Marking Codes
| Type Number | Marking Code |
|---|---|
| PDTA143XE | 35 |
| PDTA143XM | DN |
| PDTA143XT | *31 |
| PDTA143XU | *46 |
Limiting Values
| Symbol | Parameter | Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| VCBO | collector-base voltage | open emitter | - | -50 | V |
| VCEO | collector-emitter voltage | open base | - | -50 | V |
| VEBO | emitter-base voltage | open collector | - | -7 | V |
| VI | input voltage | positive | - | +7 | V |
| VI | input voltage | negative | - | -20 | V |
| IO | output current | - | - | -100 | mA |
| ICM | peak collector current | single pulse; tp 1 ms | - | -100 | mA |
| Ptot | total power dissipation | Tamb 25 C, PDTA143XE (SOT416) | - | 150 | mW |
| Ptot | total power dissipation | Tamb 25 C, PDTA143XM (SOT883) | - | 250 | mW |
| Ptot | total power dissipation | Tamb 25 C, PDTA143XT (SOT23) | - | 250 | mW |
| Ptot | total power dissipation | Tamb 25 C, PDTA143XU (SOT323) | - | 200 | mW |
| Tj | junction temperature | - | - | 150 | C |
| Tamb | ambient temperature | - | -65 | +150 | C |
| Tstg | storage temperature | - | -65 | +150 | C |
Thermal Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Rth(j-a) | thermal resistance from junction to ambient | in free air, PDTA143XE (SOT416) | - | - | 830 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient | in free air, PDTA143XM (SOT883) | - | - | 500 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient | in free air, PDTA143XT (SOT23) | - | - | 500 | K/W |
| Rth(j-a) | thermal resistance from junction to ambient | in free air, PDTA143XU (SOT323) | - | - | 625 | K/W |
Characteristics
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| ICBO | collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | -100 | nA |
| ICEO | collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | -1 | A |
| ICEO | collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | -5 | A |
| IEBO | emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | -600 | A |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA | 50 | - | - | |
| VCEsat | collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | -100 | mV |
| VI(off) | off-state input voltage | VCE = 5 V; IC = 100 A | - | -0.9 | -0.3 | V |
| VI(on) | on-state input voltage | VCE = 0.3 V; IC = 20 mA | -2.5 | -1.5 | - | V |
| R1 | bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k |
| R2/R1 | bias resistor ratio | - | 1.7 | 2.1 | 2.6 | |
| Cc | collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 180 | - | MHz |
2410121742_Nexperia-PDTA143XU-115_C503462.pdf
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