N Channel and P Channel Enhancement Mode FET NIKO-SEM P6002OAG with Low Gate Body Leakage Current
Key Attributes
Model Number:
P6002OAG
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
128pF
Input Capacitance(Ciss):
415pF
Pd - Power Dissipation:
1.14W
Gate Charge(Qg):
4nC@4.5V
Mfr. Part #:
P6002OAG
Package:
TSOP-6-1.5mm
Product Description
Product Overview
The P6002OAG is a N- & P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers Halogen-Free & Lead-Free compliance and is packaged in a TSOP-6 configuration.
Product Attributes
- Brand: NIKO-SEM
- Package: TSOP-6
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | N-Channel | P-Channel | Units |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | -20 | V |
| Gate Threshold Voltage | VGS(th) | 0.4 - 1.3 | -0.4 - -1.3 | V |
| Gate-Body Leakage | IGSS | ±100 | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | 1 | -1 | µA |
| Continuous Drain Current (TA = 25 °C) | ID | 3.4 | -2.5 | A |
| Continuous Drain Current (TA = 70 °C) | ID | 2.7 | -2 | A |
| Drain-Source On-State resistance (VGS = 4.5V, ID = 3.6A) | RDS(ON) | 47 - 115 | 60 - 115 | mΩ |
| Forward Transconductance (VDS = 5V, ID = 3.6A) | gfs | 6 - 11 | - | S |
| Input Capacitance | Ciss | 263 | 415 | pF |
| Output Capacitance | Coss | 128 | 126 | pF |
| Reverse Transfer Capacitance | Crss | 87 | 78 | pF |
| Total Gate Charge | Qg | 4 | 4 | nC |
| Gate-Source Charge | Qgs | 0.5 | 1 | nC |
| Gate-Drain Charge | Qgd | 1.6 | 1.1 | nC |
| Turn-On Delay Time | td(on) | 6 | 10 | nS |
| Rise Time | tr | 7 | 12 | nS |
| Turn-Off Delay Time | td(off) | 40 | 44 | nS |
| Fall Time | tf | 13 | 22 | nS |
| Continuous Current (Diode) | IS | 0.95 | -0.95 | A |
| Forward Voltage (Diode) | VSD | 1.2 | -1.2 | V |
| Reverse Recovery Time | trr | 14 | 25 | nS |
| Reverse Recovery Charge | Qrr | 4 | 8 | nC |
| Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA | 150 | °C / W | |
| Junction-to-Lead Thermal Resistance (Steady-State) | RθJC | 80 | °C / W | |
2411220057_NIKO-SEM-P6002OAG_C384595.pdf
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