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quality Durable NPN Resistor Equipped Transistor Nexperia PDTD143ETR with 50 Volt Collector Emitter Voltage factory
quality Durable NPN Resistor Equipped Transistor Nexperia PDTD143ETR with 50 Volt Collector Emitter Voltage factory

Durable NPN Resistor Equipped Transistor Nexperia PDTD143ETR with 50 Volt Collector Emitter Voltage

Key Attributes
Model Number: PDTD143ETR
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
4.7kΩ
Resistor Ratio:
1.1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD143ETR
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTD143ET is an NPN Resistor-Equipped Transistor (RET) designed for simplified circuit designs and reduced component counts. This small SOT23 SMD plastic package offers a 500 mA output current capability and features built-in bias resistors. It is ideal for IC input control and serves as a cost-saving alternative to BC807 series transistors in digital applications and for switching loads. With a high temperature application capability up to 175 C, it provides reliable performance in demanding environments.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN Resistor-Equipped Transistor (RET)
  • Package Type: SOT23 (TO-236AB)
  • Complementary PNP Type: PDTB143ET
  • Date of Release: 13 October 2022

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 50 V
IO Output current - - - 500 mA
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio - 0.9 1 1.1 -
VCBO Collector-base voltage open emitter - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage (positive) - -10 - 30 V
Ptot Total power dissipation Tamb 25 C (single-sided FR4 PCB) - - 320 mW
Ptot Total power dissipation Tamb 25 C (4-layer FR4 PCB) - - 460 mW
Tj Junction temperature - - - 175 C
Tamb Ambient temperature - -55 - 175 C
Tstg Storage temperature - -55 - 175 C
Rth(j-a) Thermal resistance junction to ambient free air (single-sided FR4 PCB) - 470 - K/W
Rth(j-a) Thermal resistance junction to ambient free air (4-layer FR4 PCB) - 327 - K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 40 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 50 V; IB = 0 A; Tamb = 25 C - - 0.5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 10 nA
hFE DC current gain VCE = 5 V; IC = 50 mA; Tamb = 25 C 60 - - -
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C 0.6 0.9 1.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA; Tamb = 25 C 1 1.6 2.2 V
R1 Bias resistor 1 (input) - 3.3 4.7 6.1 k
R2/R1 Bias resistor ratio - 0.9 1 1.1 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 7 - pF
fT Transition frequency VCE = 5 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C - 225 - MHz

2410121948_Nexperia-PDTD143ETR_C552256.pdf

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