Resistor Equipped NPN Double Transistor 50 Volt 100 Milliamp in Small SOT363 Package Nexperia PUMH2 115

Product Overview

PUMH2 is a 50 V, 100 mA NPN/NPN resistor-equipped double transistor in a very small SOT363 (SC-88) SMD plastic package. It features built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This transistor is ideal for low-current peripheral driver applications, control of IC inputs, and as a replacement for general-purpose transistors in digital applications. Its NPN/PNP complement is PUMD12, and its PNP/PNP complement is PUMB2.

Product Attributes

• Brand: Nexperia
• Package Type: TSSOP6 (SOT363)
• Material: Plastic
• Qualification: Non-automotive

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	Open base	-	-	50	V
IO	Output current	-	-	-	100	mA
R1	Bias resistor 1 (input)	[1]	33	47	61	k
R2/R1	Bias resistor ratio	[1]	0.8	1	1.2	-
VCBO	Collector-base voltage	Open emitter	-	-	50	V
VCEO	Collector-emitter voltage	Open base	-	-	50	V
VEBO	Emitter-base voltage	Open collector	-	-	10	V
VI	Input voltage	Positive	-	-	40	V
VI	Input voltage	Negative	-10	-	-	V
IO	Output current	-	-	-	100	mA
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	150	C
Tstg	Storage temperature	-	-65	-	150	C
Per device
Ptot	Total power dissipation	Tamb 25 C [1]	-	-	200	mW
Ptot	Total power dissipation	Tamb = 25 C [1]	-	-	300	mW
Rth(j-a)	Thermal resistance junction to ambient	Free air [1]	-	-	625	K/W
Rth(j-a)	Thermal resistance junction to ambient	Free air [1]	-	-	417	K/W
V(BR)CBO	Collector-base breakdown voltage	IC = 100 A; IE = 0 A; Tamb = 25 C	50	-	-	V
V(BR)CEO	Collector-emitter breakdown voltage	IC = 2 mA; IB = 0 A; Tamb = 25 C	50	-	-	V
ICBO	Collector-base cut-off current	VCB = 50 V; IE = 0 A	-	-	100	nA
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A	-	-	1	A
ICEO	Collector-emitter cut-off current	VCE = 30 V; IB = 0 A; Tj = 150 C	-	-	5	A
IEBO	Emitter-base cut-off current	VEB = 5 V; IC = 0 A	-	-	90	A
hFE	DC current gain	VCE = 5 V; IC = 5 mA	80	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = 10 mA; IB = 0.5 mA	-	-	150	mV
VI(off)	Off-state input voltage	VCE = 5 V; IC = 100 A	-	1.2	0.8	V
VI(on)	On-state input voltage	VCE = 0.3 V; IC = 2 mA	3	1.6	-	V
R1	Bias resistor 1 (input)	[1]	33	47	61	k
R2/R1	Bias resistor ratio	[1]	0.8	1	1.2	-
Cc	Collector capacitance	VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz	-	-	2.5	pF
fT	Transition frequency	VCE = 5 V; IC = 10 mA; f = 100 MHz [2]	-	230	-	MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor

2410121943_Nexperia-PUMH2-115_C454999.pdf