Resistor equipped transistor Nexperia PDTA144ET215 AECQ101 qualified for automotive and industrial

Key Attributes
Model Number: PDTA144ET,215
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA144ET,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTA144E series comprises PNP resistor-equipped transistors (RETs) in Surface-Mounted Device (SMD) plastic packages. These transistors are designed to reduce component count, simplify circuit design, and lower pick-and-place costs due to their built-in bias resistors. They are AEC-Q101 qualified and suitable for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/857 series in digital applications. Key applications include control of IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101 qualified
  • Resistor Values: R1 = 47 k, R2 = 47 k

Technical Specifications

Model Package NPN Complement Package Configuration Collector-Emitter Voltage (VCEO) (Open Base) Output Current (IO) Bias Resistor R1 (Input) Bias Resistor Ratio R2/R1
PDTA144EE SOT416 (SC-75) PDTC144EE ultra small -50 V -100 mA 33 k to 61 k (Typ 47 k) 0.8 to 1.2 (Typ 1)
PDTA144EM SOT883 (SC-101) PDTC144EM leadless ultra small -50 V -100 mA 33 k to 61 k (Typ 47 k) 0.8 to 1.2 (Typ 1)
PDTA144ET SOT23 (TO-236AB) PDTC144ET small -50 V -100 mA 33 k to 61 k (Typ 47 k) 0.8 to 1.2 (Typ 1)
PDTA144EU SOT323 (SC-70) PDTC144EU very small -50 V -100 mA 33 k to 61 k (Typ 47 k) 0.8 to 1.2 (Typ 1)

Key Characteristics (Tamb = 25 C unless otherwise specified)

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - -1 A
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - -150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A - -1.2 -0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 2 mA -3 -1.6 - V
Cc Collector capacitance VCB = 10 V; IE = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz - 180 - MHz

2410121735_Nexperia-PDTA144ET-215_C190570.pdf

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