SOT363 Package Double Transistor Nexperia NHUMD12X with Built In Resistors and 100 Milliamp Output Current
Key Attributes
Model Number:
NHUMD12X
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
NHUMD12X
Package:
TSSOP-6
Product Description
Product Overview
The Nexperia NHUMD3/2/12 series comprises resistor-equipped double transistors (RET) in a compact SOT363 (SC-88) package. These NPN/PNP devices offer an 80 V breakdown voltage and 100 mA output current capability. Featuring built-in resistors, they simplify circuit design, reduce component count, and lower pick-and-place costs. These transistors are AEC-Q101 qualified, making them suitable for digital applications, controlling IC inputs, and switching loads, serving as a cost-effective alternative to BC846/BC856 series in digital contexts.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Certifications: AEC-Q101 qualified
Technical Specifications
| Model | R1 (k) | R2 (k) | Package | Collector-Emitter Voltage (VCEO) (Max) | Output Current (IO) (Max) |
|---|---|---|---|---|---|
| NHUMD3 | 10 | 10 | SOT363 (SC-88) | 80 V | 100 mA |
| NHUMD2 | 22 | 22 | SOT363 (SC-88) | 80 V | 100 mA |
| NHUMD12 | 47 | 47 | SOT363 (SC-88) | 80 V | 100 mA |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Per transistor, for the PNP transistor with negative polarity | |||||
| Collector-emitter voltage (VCEO) | Open base | - | - | 80 | V |
| Output current (IO) | - | - | - | 100 | mA |
| Collector-base voltage (VCBO) | Open emitter | - | - | 80 | V |
| Emitter-base voltage (VEBO) | Open collector | - | - | 10 | V |
| Collector cut-off current (ICBO) | VCB = 80 V; IE = 0 A | - | - | 100 | nA |
| Collector cut-off current (ICEO) | VCE = 60 V; IB = 0 A | - | - | 100 | nA |
| Collector cut-off current (ICEO) | VCE = 60 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| DC current gain (hFE) | VCE = 5 V; IC = 10 mA | (See specific model values) | - | - | - |
| Collector-emitter saturation voltage (VCEsat) | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV |
| Transition frequency (fT) | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | (See specific model values) | - | MHz |
| Collector capacitance (Cc) | VCB = 10 V; IE = 0 A; f = 1 MHz | - | - | (See specific model values) | pF |
| Input voltage | |||||
| NHUMD3, TR1 (NPN) | - | -10 | - | +40 | V |
| NHUMD3, TR2 (PNP) | - | -40 | - | +10 | V |
| NHUMD2, TR1 (NPN) | - | -10 | - | +60 | V |
| NHUMD2, TR2 (PNP) | - | -60 | - | +10 | V |
| NHUMD12, TR1 (NPN) | - | -10 | - | +80 | V |
| NHUMD12, TR2 (PNP) | - | -80 | - | +10 | V |
| Total power dissipation (Ptot) | |||||
| Per device | Tamb 25 C [1] | - | - | 235 | mW |
| Per device | Tamb 25 C [1] | - | - | 350 | mW |
| Junction temperature (Tj) | |||||
| - | - | - | - | 150 | C |
| Ambient temperature (Tamb) | |||||
| - | - | -55 | - | 150 | C |
| Storage temperature (Tstg) | |||||
| - | - | -65 | - | 150 | C |
| [1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint. | |||||
| Model | Bias resistor 1 (R1) (k) | Bias resistor ratio (R2/R1) | Emitter-base cut-off current (IEBO) (VEB = 7 V; IC = 0 A) | DC current gain (hFE) (VCE = 5 V; IC = 10 mA) | Transition frequency (fT) (VCE = 5 V; IC = 10 mA; f = 100 MHz) | Collector capacitance (Cc) (VCB = 10 V; IE = 0 A; f = 1 MHz) |
|---|---|---|---|---|---|---|
| NHUMD3 | 7 to 13 | 0.8 to 1.2 | 600 A | 50 | 170 MHz | 2.5 pF |
| NHUMD2 | 15.4 to 28.6 | 0.8 to 1.2 | 270 A | 70 | 150 MHz | 3 pF |
| NHUMD12 | 33 to 61 | 0.8 to 1.2 | 130 A | 100 | 150 MHz | 3 pF |
| Pin | Symbol | Description |
|---|---|---|
| 1 | GND1 | GND (emitter) TR1 |
| 2 | I1 | Input (base) TR1 |
| 3 | O2 | Output (collector) TR2 |
| 4 | GND2 | GND (emitter) TR2 |
| 5 | I2 | Input (base) TR2 |
| 6 | O1 | Output (collector) TR1 |
| Type number | Marking code [1] |
|---|---|
| NHUMD3 | 6M% |
| NHUMD2 | 6Q% |
| NHUMD12 | 6S% |
| [1] % = placeholder for manufacturing site code | |
2411272001_Nexperia-NHUMD12X_C3589068.pdf
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