High Current Capacity PNP Transistor NH MMBTA42 in Compact Pb Free SOT23 Package for Electronic Devices
Product Overview
The MMBTA42 is a PNP transistor from Niuhang Specification Electronic Co. Ltd, designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and is available in a Pb-Free package. This transistor is suitable for general-purpose applications where a compact and reliable component is required.
Product Attributes
- Brand: Niuhang Specification Electronic Co. Ltd
- Package: SOT-23
- Certifications: Epoxy UL: 94V-0
- Material: Pb-Free Package is available
Technical Specifications
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC=10mA, IB=0 | 300 | - | - | V |
| Collector Cutoff Current | ICBO | VCB=200V, IE=0 | - | - | 100 | nA |
| Collector-Base Breakdown Voltage | V(BR)CBO | IE=100A, IC=0 | 300 | - | - | V |
| Emitter Cutoff Current | IEBO | VEB=6V, IC=0 | - | - | 100 | A |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IC=10mA, IB=0 | - | - | 6 | V |
| DC Current Gain | HFE(1) | VCE=10V, IC=10mA | - | 280 | - | - |
| DC Current Gain | HFE(2) | VCE=10V, IC=1mA | - | 50 | - | - |
| Transition Frequency | FT | VCE=20V, IC=-10mA, f=100MHz | - | 300 | - | MHz |
| Base-Emitter Saturation Voltage | VBE(Sat) | IC=20mA, IB=2mA | - | 0.9 | - | V |
| Collector-Emitter Saturation Voltage | VCE(Sat) | IC=20mA, IB=2mA | - | - | 0.5 | V |
Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Collector Power Dissipation | PC | 500 | mW |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | TSTG | -55 to 150 |
Mechanical Data
| Parameter | Symbol | Value | Unit |
| Collector Current | IC | 0.5 | A |
| Collector-Emitter Voltage | VCEO | 300 | V |
| Collector-Base Voltage | VCBO | 300 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
2410121819_NH-MMBTA42_C7427902.pdf
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