Compact SOT23 NPN Transistor Nexperia BC846B-QR Suitable for Automotive Electronics and Amplification

Key Attributes
Model Number: BC846B-QR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
5uA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
100MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
BC846B-QR
Package:
SOT-23
Product Description

Nexperia BC846x-Q Series: 65 V, 100 mA NPN General-Purpose Transistors

Product Overview
The Nexperia BC846x-Q series comprises NPN general-purpose transistors designed for a wide range of applications. These transistors are housed in compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic packages. They offer two distinct gain selections and are qualified according to AEC-Q101, making them suitable for automotive applications. Ideal for general-purpose switching and amplification tasks, these transistors provide reliable performance in a small form factor.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Certification: AEC-Q101 Qualified
  • Application Suitability: Automotive

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 65 V
IC Collector current - - - 100 mA
hFE DC current gain BC846-Q 110 - 450 -
hFE DC current gain BC846A-Q 110 180 220 -
hFE DC current gain BC846B-Q; VCE = 5 V; IC = 2 mA 200 290 450 -
VCBO Collector-base voltage Open emitter - - 80 V
VEBO Emitter-base voltage Open collector - - 6 V
ICM Peak collector current Single pulse; tp 1 ms - - 200 mA
IBM Peak base current Single pulse; tp 1 ms - - 200 mA
Ptot Total power dissipation Tamb 25 C - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient In free air - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 80 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA; IE = 0 A; Tamb = 25 C 65 - - V
V(BR)EBO Emitter-base breakdown voltage IE = 100 A; IC = 0 A; Tamb = 25 C 6 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 15 nA
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 100 nA
hFE DC current gain BC846A-Q; VCE = 5 V; IC = 10 A; Tamb = 25 C - 180 - -
hFE DC current gain BC846B-Q; VCE = 5 V; IC = 10 A; Tamb = 25 C - 290 - -
hFE DC current gain BC846-Q; VCE = 5 V; IC = 2 mA; Tamb = 25 C 110 - 450 -
hFE DC current gain BC846A-Q; VCE = 5 V; IC = 2 mA; Tamb = 25 C 110 180 220 -
hFE DC current gain BC846B-Q; VCE = 5 V; IC = 2 mA; Tamb = 25 C 200 290 450 -
VCEsat Collector-emitter saturation voltage IC =10 mA; IB = 0.5 mA; Tamb = 25 C - 90 200 mV
VCEsat Collector-emitter saturation voltage IC =100 mA; IB = 5 mA; Tamb = 25 C - 200 400 mV
VBEsat Base-emitter saturation voltage IC =10 mA; IB = 0.5 mA; Tamb = 25 C - 760 - mV
VBEsat Base-emitter saturation voltage IC =100 mA; IB = 5 mA; Tamb = 25 C - 900 - mV
VBE Base-emitter voltage IC = 2 mA; VCE = 5 V; Tamb = 25 C 580 660 700 mV
VBE Base-emitter voltage IC = 10 mA; VCE = 5 V; Tamb = 25 C - - 770 mV
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C 100 - - MHz
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz; Tamb = 25 C - 2 3 pF
Ce Emitter capacitance VEB = 0.5 V; IC = ic = 0 A; f = 1 MHz; Tamb = 25 C - 11 - pF
NF Noise figure IC = 200 A; VCE = 5 V; RS = 2 k; f = 1 kHz; B = 200 Hz; Tamb = 25 C - 2 10 dB

2410010132_Nexperia-BC846B-QR_C5224566.pdf
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