High breakdown voltage diode onsemi MMSD4148T1G with SOD123 package halogen free and AECQ101 qualified
Key Attributes
Model Number:
MMSD4148T1G
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
425mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
MMSD4148T1G
Package:
SOD-123
Product Description
Product Overview
The MMSD4148T1G, SMMSD4148T1G, MMSD4148T3G, and SMMSD4148T3G are fast switching diodes designed for surface mount applications. They feature a high breakdown voltage and are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements. These devices are Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (ON Semiconductor)
- Package: SOD-123 Surface Mount Package
- Certifications: AEC-Q101 Qualified, PPAP Capable
- Compliance: Pb-Free, Halogen Free/BFR Free, RoHS Compliant
- Prefix 'S': For Automotive and Other Applications Requiring Unique Site and Control Change Requirements
Technical Specifications
| Model | Continuous Reverse Voltage (VR) | Peak Forward Current (IF) | Peak Forward Surge Current (IFSM) (t < 1 sec) | Peak Forward Surge Current (IFSM) (t = 1 sec) | Operating and Storage Junction Temperature Range (TJ, Tstg) | Reverse Breakdown Voltage (V(BR)) (IBR = 100 A) | Reverse Voltage Leakage Current (IR) (VR = 20 V) | Reverse Voltage Leakage Current (IR) (VR = 75 V) | Forward Voltage (VF) (IF = 10 mA) | Diode Capacitance (CD) (VR = 0 V, f = 1.0 MHz) | Reverse Recovery Time (trr) (IF = IR = 10 mA) | Total Device Dissipation (PD) (FR-5 Board, TA = 25C) | Derate above 25C | Thermal Resistance Junction-to-Ambient (RJA) | Package Type | Shipping (Tape & Reel) |
| MMSD4148T1G | 100 V | 200 mA | 1.0 A | 2.0 A | -55 to +150 C | 100 V | 25 nA | 5.0 A | 1000 mV | 4.0 pF | 4.0 ns | 425 mW | 3.4 mW/C | 290 C/W | SOD-123 | 3,000 |
| SMMSD4148T1G | 100 V | 200 mA | 1.0 A | 2.0 A | -55 to +150 C | 100 V | 25 nA | 5.0 A | 1000 mV | 4.0 pF | 4.0 ns | 425 mW | 3.4 mW/C | 290 C/W | SOD-123 | 3,000 |
| MMSD4148T3G | 100 V | 200 mA | 1.0 A | 2.0 A | -55 to +150 C | 100 V | 25 nA | 5.0 A | 1000 mV | 4.0 pF | 4.0 ns | 425 mW | 3.4 mW/C | 290 C/W | SOD-123 | 10,000 |
| SMMSD4148T3G | 100 V | 200 mA | 1.0 A | 2.0 A | -55 to +150 C | 100 V | 25 nA | 5.0 A | 1000 mV | 4.0 pF | 4.0 ns | 425 mW | 3.4 mW/C | 290 C/W | SOD-123 | 10,000 |
2410010301_onsemi-MMSD4148T1G_C11177.pdf
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