High Frequency Super Fast Recovery Rectifier NH ES5M Ideal for in Inverters and LED Driver Circuits
Product Overview
The Niu Hang ES5A thru ES5M series are surface mount super fast recovery rectifiers designed for high-frequency applications. They feature glass passivated chip junctions, super fast reverse recovery times, low forward voltage drop for high efficiency, and low leakage current for high reliability. These rectifiers are suitable for use in high frequency inverters, AC/DC converters, DC/DC converters, and LED driver applications.
Product Attributes
- Brand: Niu Hang (niuhang trademark)
- Product Line: FF (according to actual changes)
- Periodic Code: YWW (according to actual changes)
- Model: ES5x (x=A,B,D,G,J,K,M)
- Terminals: Plated Leads, Solderable per MIL-STD-202, Method 208
- Mounting Position: Any
- Lead Free: Lead Free Finish, RoHS Compliant
- Weight: Approx. 0.254 grams (0.009 ounce)
- Marking and Polarity: White band denotes cathode
- Origin: Niu Hang Specification Electronic Co. Ltd
- Data Revision: A/1
- Data Date: 2014/10/20
Technical Specifications
| Parameter | Symbol | ES5A | ES5B | ES5D | ES5G | ES5J | ES5K | ES5M | Unit |
|---|---|---|---|---|---|---|---|---|---|
| Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified) | |||||||||
| Maximum DC blocking voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum average forward rectified current (see fig.1) | IF(AV) | 5.0 | A | ||||||
| Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL)(see fig.5) | IFSM | 150 | A | ||||||
| Current Squared Time Per Diode (t<8.3ms) | I2t | 1.25 | 1.68 | 1.95 | 3.50 | - | - | - | Asec |
| Maximum instantaneous forward voltage (Note 1) | VF | 1.20 | 1.60 | 1.90 | 3.40 | - | - | - | V |
| Maximum instantaneous reverse current at rated DC blocking voltage (see fig.3)(Note 1) | IR | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | uA |
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum average forward rectified current | IF(AV) | 5.0 | A | ||||||
| Peak forward surge current | IFSM | 150 | A | ||||||
| Current Squared Time Per Diode(t<8.3ms) | I2t | 1.25 | 1.68 | 1.95 | 3.50 | - | - | - | Asec |
| Maximum instantaneous forward voltage | VF | 1.20 | 1.60 | 1.90 | 3.40 | - | - | - | V |
| Maximum instantaneous reverse current at rated DC blocking voltage | IR | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | uA |
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | |||||||||
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum average forward rectified current | IF(AV) | 5.0 | A | ||||||
| Peak forward surge current | IFSM | 150 | A | ||||||
| Current Squared Time Per Diode(t<8.3ms) | I2t | 1.25 | 1.68 | 1.95 | 3.50 | - | - | - | Asec |
| Maximum instantaneous forward voltage (Note 1) | VF | 1.20 | 1.60 | 1.90 | 3.40 | - | - | - | V |
| Maximum instantaneous reverse current at rated DC blocking voltage (see fig.3)(Note 1) | IR | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | 5.0 | uA |
| Maximum Reveese Recovery Time | TRR | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | ns |
| Typical junction capacitance (see fig.4) | CJ | 93.38 | 59.76 | 0.95 | 0.90 | - | - | - | pF |
| Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified) | |||||||||
| Operating junction to case thermal resistance (Note 2) | RJC | 45 | /W | ||||||
| Typical thermal resistance (Note 2) | RJA | 80 | /W | ||||||
| Operating temperature range | TJ | 150 | |||||||
| Storage temperature range | TSTG | -55 to 150 | |||||||
2411220435_NH-ES5M_C7427721.pdf
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