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quality General Purpose Rectifier NH 1N4004 Glass Passivated Chip Junction Diode for Low Voltage Applications factory
quality General Purpose Rectifier NH 1N4004 Glass Passivated Chip Junction Diode for Low Voltage Applications factory

General Purpose Rectifier NH 1N4004 Glass Passivated Chip Junction Diode for Low Voltage Applications

Key Attributes
Model Number: 1N4004
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@400V
Operating Junction Temperature Range:
-65℃~+150℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
400V
Voltage - Forward(Vf@If):
1V@1A
Current - Rectified:
1A
Mfr. Part #:
1N4004
Package:
DO-41
Product Description

Niu Hang 1N4001 THRU 1N4007 General Purpose Rectifiers

The Niu Hang 1N4001 through 1N4007 series are general-purpose rectifiers featuring glass passivated chip junctions, low forward voltage drop for high efficiency, low leakage current for high reliability, and high forward surge capability. They are designed for use in low voltage, high frequency inverters, DC/DC converters, free wheeling, and polarity protection applications.

Product Attributes

  • Brand: Niu Hang (NH)
  • Material: Glass passivated chip junction
  • Certifications: RoHS Compliant, Lead Free Finish

Technical Specifications

Model Max. Avg. Forward Rectified Current (IF(AV)) @ TA=25 Max. RMS Voltage (VRMS) Max. DC Blocking Voltage (VR) Max. Repetitive Peak Reverse Voltage (VRRM) Peak Forward Surge Current (IFSM) @ 8.3ms Max. Instantaneous Forward Voltage (VF) @ IF=1.0A Max. Instantaneous Reverse Current (IR) @ VR=VRRM Typical Junction Capacitance (CJ) @ VR=4V, 1MHz Typical Thermal Resistance (RJA)
1N4001 1.0A 50V 50V 50V 35A 1.0V 50A 15pF 100/W
1N4002 1.0A 100V 100V 100V 70A 1.0V 50A 15pF 100/W
1N4003 1.0A 200V 200V 200V 140A 1.0V 50A 15pF 100/W
1N4004 1.0A 400V 400V 400V 280A 1.0V 50A 15pF 100/W
1N4005 1.0A 600V 600V 600V 420A 1.0V 50A 15pF 100/W
1N4006 1.0A 800V 800V 800V 560A 1.0V 50A 15pF 100/W
1N4007 1.0A 1000V 1000V 1000V 700A 1.0V 50A 15pF 100/W
Parameter Symbol Rating Unit
Storage temperature range TSTG -65 to 150
Operating junction temperature TJ 150
Maximum average forward rectified current (Note 1) IF(AV) 1.0 A
Current Squared Time Per Diode (t<8.3ms) I2t 50~700 (See table above) A2sec
Maximum instantaneous forward voltage (see fig.2) (Note 1) VF 1.0 V
Maximum instantaneous reverse current at rated DC blocking voltage (see fig.3)(Note 1) IR 50 A
Typical junction capacitance (see fig.4) CJ 15 pF
Typical thermal resistance (Note 2) RJA 100 /W
Dimension A B C D
Inches 0.079 - 0.110 0.988 0.024 - 0.035 0.165 - 0.205
Milimeters 2.0 - 2.8 25.1 0.6 - 0.9 4.2 - 5.2

2410121747_NH-1N4004_C7428216.pdf

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