Low Forward Voltage Schottky Diode onsemi NSR0130P2T5G for Voltage Clamping and High Speed Switching

Key Attributes
Model Number: NSR0130P2T5G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
1A
Reverse Leakage Current (Ir):
3uA@30V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
525mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
NSR0130P2T5G
Package:
SOD-923
Product Description

Schottky Barrier Diode - NSR0130P2T5G

These Schottky barrier diodes are designed for high-speed switching applications, circuit protection, and voltage clamping. Their extremely low forward voltage reduces conduction loss, and the miniature surface mount package is ideal for space-limited, hand-held, and portable applications.

Product Attributes

  • Brand: onsemi (Semiconductor Components Industries, LLC)
  • Pb-Free Device: Yes

Technical Specifications

Characteristic Symbol Min Typ Max Unit Notes
Reverse Voltage VR 30 Vdc
Forward Current DC IF 100 mA
Forward Current Surge Peak (60 Hz, 1 cycle) IFSM 1.0 A
Total Device Dissipation FR-5 Board PD 200 mW TA = 25C
Derate above 25C 2.0 mW/C
Thermal Resistance, Junction-to-Ambient RJA 600 C/W
Junction and Storage Temperature Range TJ, Tstg -55 +125 C
Reverse Leakage (VR = 10 V) IR 0.35 A TA = 25C
Reverse Leakage (VR = 30 V) IR 3.0 A TA = 25C
Forward Voltage (IF = 10 mA) VF 0.385 Vdc TA = 25C
Forward Voltage (IF = 100 mA) VF 0.525 Vdc TA = 25C

Ordering Information

Part Number Package Shipping
NSR0130P2T5G SOD-923 8000/Tape & Reel

2410010303_onsemi-NSR0130P2T5G_C146776.pdf

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