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quality Nexperia 2PD1820AS115 transistor offering low collector emitter saturation voltage and high current factory
quality Nexperia 2PD1820AS115 transistor offering low collector emitter saturation voltage and high current factory

Nexperia 2PD1820AS115 transistor offering low collector emitter saturation voltage and high current

Key Attributes
Model Number: 2PD1820AS,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
10nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
2PD1820AS,115
Package:
SOT-323
Product Description

Product Overview

The Nexperia 2PD1820A is an NPN general purpose transistor designed for switching and amplification applications, particularly in portable equipment. It features high current capability (up to 500 mA), low voltage operation (up to 50 V), and a low collector-emitter saturation voltage (max. 600 mV). This transistor is housed in an SC-70 (SOT323) plastic package.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Product Type: NPN general purpose transistor
  • Package: SC-70; SOT323 plastic package
  • PNP Complement: 2PB1219A

Technical Specifications

Symbol Parameter Conditions Min. Max. Unit
LIMITING VALUES (In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board.)
VCBO collector-base voltage open emitter - 60 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) - 500 mA
ICM peak collector current - 1 A
IBM peak base current - 200 mA
Ptot total power dissipation Tamb 25 C; note 1 - 200 mW
Tstg storage temperature -65 +150 C
Tj junction temperature - 150 C
Tamb operating ambient temperature -65 +150 C
THERMAL CHARACTERISTICS (Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. Note 1. Pulse test: tp 300 s; 0.02.)
Rth j-a thermal resistance from junction to ambient note 1 - 625 K/W
CHARACTERISTICS (Tamb = 25 C unless otherwise specified. Note 1. Pulse test: tp 300 s; 0.02.)
ICBO collector cut-off current IE = 0; VCB = 20 V - 10 nA
IE = 0; VCB = 20 V; Tj = 150 C - 5 A
IEBO emitter cut-off current IC = 0; VEB = 4 V - 10 nA
hFE DC current gain IC = 150 mA; VCE = 10 V; note 1
2PD1820AQ 85 170
2PD1820AR 120 240
2PD1820AS 170 340
hFE DC current gain IC = 500 mA; VCE = 10 V; note 1 40 -
VCEsat collector-emitter saturation voltage IC = 300 mA; IB = 30 mA; note 1 - 600 mV
Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz - 15 pF
fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz; note 1 150 - MHz

2410121948_Nexperia-2PD1820AS-115_C554104.pdf

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