High surge current NH MURF6060P rectifier designed for power electronics applications and operation
Key Attributes
Model Number:
MURF6060P
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA
Non-Repetitive Peak Forward Surge Current:
600A
Reverse Recovery Time (trr):
50ns
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.6V@60A
Current - Rectified:
60A
Mfr. Part #:
MURF6060P
Package:
TO-247AC
Product Description
Product Overview
The MURF6060P is a high-efficiency rectifier from Niuhang Electronic Specification Technology Co., Ltd. It features a glass-passivated chip junction, low forward voltage drop for high efficiency, low leakage current, and high forward surge capability. Designed for reliability and performance, it is suitable for a wide range of power electronics applications.
Product Attributes
- Brand: Niuhang
- Model: MURF6060P
- Package: TO-247AC
- Certifications: RoHS-Compliant, UL 94 V-0 Flammability Rating
- Material: Plastic Molding Compound
- Origin: China (implied by company name and website)
Technical Specifications
| Parameter | Test Conditions | Symbol | MURF6060P | Unit |
| Maximum Ratings | ||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 600 | V | |
| Maximum RMS Voltage | VRMS | 420 | V | |
| Maximum DC Blocking Voltage | VDC | 600 | V | |
| Maximum Average Forward Rectified Current | @TC= 100 C | IF(AV) | 60 | A |
| Peak Forward Surge Current | 8.3ms Single Half Sine-wave Superimposed On Rate Load | IFSM | 600 | A |
| Current Squared Time Per Diode | t<8.3ms | I2t | 1494.0 | A2sec |
| Electrical Characteristics | ||||
| Instantaneous forward voltage per diode (note1) | Ta=25, IF= 60.0 A | VF | -- 1.35 1.60 | V |
| Instantaneous forward voltage per diode (note1) | Ta=125 | VF | -- 1.25 1.50 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Note 1) | Ta=25, VR= VRRM | IRRM | -- 1 5 | uA |
| Maximum DC Reverse Current at Rated DC Blocking Voltage (Note 1) | Ta=125, VR= 80%*VRRM | IRRM | -- 50 500 | uA |
| Typical Junction Capacitance Per Diode | 4.0 V,1MHz | CJ | -- 24 -- | pF |
| Maximum Reverse Recovery Time | IF=0.5A, IR=1.0A, IRR=0.25A | TRR | -- -- 75 | nS |
| Thermal Characteristics | ||||
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Storage Temperature Range | TSTD | -55 to 150 | ||
| Typical thermal resistance (Note 2) | RJA | 35 | /W | |
| Typical thermal resistance (Note 2) | RJC | 0.8 | /W | |
Notes:
1. Pulse Test: 300 Us Pulse Width,1% Duty Cycle
2. Device Mounted On 10cm*10cm*1mm copper pad areas.
Typical Applications
Switching Power Supplies, High Frequency Converters, UPS, Freewheeling Diodes, PFC Boost, and LED Drivers.
2505061659_NH-MURF6060P_C7427765.pdf
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