Soft recovery power diode onsemi RHRP8120-F102 suitable for freewheeling and clamping in power electronics
Key Attributes
Model Number:
RHRP8120-F102
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
100uA@1.2kV
Reverse Recovery Time (trr):
70ns
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
1.2kV
Operating Junction Temperature Range:
-65℃~+175℃
Pd - Power Dissipation:
75W
Voltage - Forward(Vf@If):
3.2V@8A
Current - Rectified:
8A
Mfr. Part #:
RHRP8120-F102
Package:
TO-220-2
Product Description
Product Overview
The RHRP8120 is a hyperfast diode with soft recovery characteristics, offering half the recovery time of ultrafast diodes. Designed with silicon nitride passivated ion-implanted epitaxial planar construction, it is ideal for use as freewheeling/clamping diodes and in various switching power supplies and power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise, thereby reducing power loss in switching transistors.
Product Attributes
- Brand: onsemi
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | Brand | Peak Repetitive Reverse Voltage (VRRM) | Working Peak Reverse Voltage (VRWM) | DC Blocking Voltage (VR) | Average Rectified Forward Current (IF(AV)) | Repetitive Peak Surge Current (IFRM) | Nonrepetitive Peak Surge Current (IFSM) | Maximum Power Dissipation (PD) | Avalanche Energy (EAVL) | Operating and Storage Temperature (TSTG, TJ) | Max Forward Voltage (VF) | Reverse Recovery Time (trr) | Junction Capacitance (CJ) | Thermal Resistance Junction to Case (RJC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RHRP8120 | TO-220AC-2L | RHRP8120 | 1200 V | 1200 V | 1200 V | 8 A (TC = 140C) | 16 A (Square Wave, 20 kHz) | 100 A (Halfwave, 1 Phase, 60 Hz) | 75 W | 20 mJ | -65 to 175 C | 3.2 V (@ TC = 25C) | 70 ns (@ IF= 8 A) | 25 pF (VR = 1200 V) | 2 C/W |
2411220655_onsemi-RHRP8120-F102_C898828.pdf
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