Small signal diode onsemi 1N457 designed for operation within specified temperature and power limits
Key Attributes
Model Number:
1N457
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
4A
Reverse Leakage Current (Ir):
25nA@60V
Diode Configuration:
-
Voltage - DC Reverse (Vr) (Max):
70V
Voltage - Forward(Vf@If):
1V@20mA
Current - Rectified:
200mA
Mfr. Part #:
1N457
Package:
DO-35
Product Description
ON Semiconductor 1N457/A Small Signal Diode
The ON Semiconductor 1N457/A is a small signal diode designed for general-purpose applications. It offers reliable performance with specified electrical characteristics and absolute maximum ratings.
Product Attributes
- Brand: ON Semiconductor
- Origin: United States (implied by ON Semiconductor's operations)
- Color Band Denotes Cathode
Technical Specifications
| Part Number | Maximum Repetitive Reverse Voltage (VRRM) | Average Rectified Forward Current (IF(AV)) | Non-repetitive Peak Forward Surge Current (IFSM) (1.0 s) | Non-repetitive Peak Forward Surge Current (IFSM) (1.0 s) | Storage Temperature Range (Tstg) | Operating Junction Temperature (TJ) | Power Dissipation (PD) | Thermal Resistance, Junction to Ambient (RJA) | Breakdown Voltage (VR) | Forward Voltage (VF) (IF = 20 mA) | Forward Voltage (VF) (IF = 100 mA) | Reverse Current (IR) (VR = 60 V) | Reverse Current (IR) (VR = 60 V, TA = 150C) | Total Capacitance (CT) (VR = 0, f = 1.0 MHz) |
| 1N457/A | 70 V | 200 mA | 1.0 A | 4.0 A | -65 to +200 C | 175 C | 500 mW | 300 C/W | 70 V | 1.0 V | 1.0 V | 25 nA | 5 A | 8.0 pF |
2412091012_onsemi-1N457_C895219.pdf
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