Nexperia PUMB2 115 resistor equipped transistor for replacing general purpose transistors in circuits
Key Attributes
Model Number:
PUMB2,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Output Voltage(VO(on)):
-
Input Resistor:
47kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMB2,115
Package:
SOT-363
Product Description
Product Overview
The PEMB2 and PUMB2 are PNP/PNP resistor-equipped transistors (RET) in surface-mounted device (SMD) plastic packages. These components are designed to reduce component count, simplify circuit design, and lower pick-and-place costs due to their built-in bias resistors. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for automotive applications. Ideal for low current peripheral driving and controlling IC inputs, these transistors can replace general-purpose transistors in digital applications.
Product Attributes
- Brand: NXP Semiconductors
- Certifications: AEC-Q101 qualified
Technical Specifications
| Model | Package | NPN/PNP Complement | Package Configuration | Output Current Capability (Per Transistor) | Bias Resistor R1 (Input) | Bias Resistor Ratio R2/R1 | Collector-Emitter Voltage (VCEO, open base) | Collector-Base Voltage (VCBO, open emitter) | Emitter-Base Voltage (VEBO, open collector) | Input Voltage (VI, positive) | Input Voltage (VI, negative) | Peak Collector Current (ICM, single pulse, tp 1 ms) | Total Power Dissipation (Ptot, Tamb 25 C, Per Device) | Junction Temperature (Tj) | Ambient Temperature (Tamb) | Storage Temperature (Tstg) | Thermal Resistance (Rth(j-a), Per Device, Free Air) | DC Current Gain (hFE, VCE = 5 V; IC = 5 mA) | Collector-Emitter Saturation Voltage (VCEsat, IC = 10 mA; IB = 0.5 mA) | Collector Capacitance (Cc, VCB = 10 V; IE = 0 A; f = 1 MHz) | Transition Frequency (fT, VCE = 5 V; IC = 10 mA; f = 100 MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PEMB2 | SOT666 (ultra small and flat lead) | PEMD12 | 6 leads | -100 mA | 33 k to 61 k (Typ: 47 k) | 0.8 to 1.2 (Typ: 1) | -50 V | -50 V | -10 V | +10 V | -40 V | -100 mA | 200 mW (Per Transistor), 300 mW (Per Device) | 150 C | -65 C to +150 C | -65 C to +150 C | 417 K/W (Per Device) | 80 | -150 mV | 3 pF | 180 MHz |
| PUMB2 | SOT363 (SC-88, very small) | PUMH2 | 6 leads | -100 mA | 33 k to 61 k (Typ: 47 k) | 0.8 to 1.2 (Typ: 1) | -50 V | -50 V | -10 V | +10 V | -40 V | -100 mA | 200 mW (Per Transistor), 300 mW (Per Device) | 150 C | -65 C to +150 C | -65 C to +150 C | 417 K/W (Per Device) | 80 | -150 mV | 3 pF | 180 MHz |
Applications
- Low current peripheral driver
- Control of IC inputs
- Replacement of general-purpose transistors in digital applications
2410121742_Nexperia-PUMB2-115_C455005.pdf
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