field stop igbt onsemi FGH40N60SFDTU 600 volt 40 amp offering performance in industrial applications
Key Attributes
Model Number:
FGH40N60SFDTU
Product Custom Attributes
Td(off):
115ns
Pd - Power Dissipation:
290W
Td(on):
25ns
Collector-Emitter Breakdown Voltage (Vces):
600V
Reverse Transfer Capacitance (Cres):
60pF
IGBT Type:
FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4V@250uA
Gate Charge(Qg):
120nC
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
45ns
Switching Energy(Eoff):
310uJ
Turn-On Energy (Eon):
1.13mJ
Input Capacitance(Cies):
2.11nF
Output Capacitance(Coes):
200pF
Mfr. Part #:
FGH40N60SFDTU
Package:
TO-247
Product Description
FGH40N60SFD - 600 V, 40 A Field Stop IGBT
The FGH40N60SFD is a 600 V, 40 A Field Stop IGBT from Fairchild Semiconductor, utilizing novel field stop technology. It offers an optimum performance for applications requiring low conduction and switching losses, such as solar inverters, UPS, welders, PFC, microwave ovens, and telecom systems. Key advantages include high current capability, low saturation voltage (VCE(sat) = 2.3 V @ IC = 40 A), high input impedance, and fast switching speeds. The device is RoHS compliant.
Product Attributes
- Brand: Fairchild Semiconductor
- Product Series: FGH40N60SFD
- Technology: Field Stop IGBT
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector to Emitter Voltage (VCES) | 600 | V | |||
| Gate to Emitter Voltage (VGES) | ±20 | ±30 | V | ||
| Collector Current @ TC = 25°C (IC) | 80 | A | |||
| Collector Current @ TC = 100°C (IC) | 40 | A | |||
| Pulsed Collector Current @ TC = 25°C (ICM) | (1) | 120 | A | ||
| Maximum Power Dissipation @ TC = 25°C (PD) | 290 | W | |||
| Maximum Power Dissipation @ TC = 100°C (PD) | 116 | W | |||
| Operating Junction Temperature (TJ) | -55 | +150 | °C | ||
| Storage Temperature Range (Tstg) | -55 | +150 | °C | ||
| Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds (TL) | 300 | °C | |||
| Thermal Characteristics | |||||
| Thermal Resistance, Junction to Case (RθJC(IGBT)) | - | 0.43 | °C/W | ||
| Thermal Resistance, Junction to Case (RθJC(Diode)) | - | 1.45 | °C/W | ||
| Thermal Resistance, Junction to Ambient (RθJA) | - | 40 | °C/W | ||
| Electrical Characteristics of the IGBT | |||||
| Collector to Emitter Breakdown Voltage (BVCES) | VGE = 0 V, IC = 250 μA | 600 | - | - | V |
| Temperature Coefficient of Breakdown Voltage (ΔBVCES / ΔTJ) | VGE = 0 V, IC = 250 μA | - | 0.6 | - | V/°C |
| Collector Cut-Off Current (ICES) | VCE = VCES, VGE = 0 V | - | - | 250 | μA |
| G-E Leakage Current (IGES) | VGE = VGES, VCE = 0 V | - | - | ±400 | nA |
| G-E Threshold Voltage (VGE(th)) | IC = 250 μA, VCE = VGE | 4.0 | 5.0 | 6.5 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 40 A, VGE = 15 V | - | 2.3 | 2.9 | V |
| Collector to Emitter Saturation Voltage (VCE(sat)) | IC = 40 A, VGE = 15 V, TC = 125°C | - | 2.5 | - | V |
| Input Capacitance (Cies) | VCE = 30 V, VGE = 0 V, f = 1 MHz | - | 2110 | - | pF |
| Output Capacitance (Coes) | - | 200 | - | pF | |
| Reverse Transfer Capacitance (Cres) | - | 60 | - | pF | |
| Turn-On Delay Time (td(on)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 25 | - | ns |
| Rise Time (tr) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 42 | - | ns |
| Turn-Off Delay Time (td(off)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 115 | - | ns |
| Fall Time (tf) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 27 | 54 | ns |
| Turn-On Switching Loss (Eon) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 1.13 | - | mJ |
| Turn-Off Switching Loss (Eoff) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 0.31 | - | mJ |
| Total Switching Loss (Ets) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 25°C | - | 1.44 | - | mJ |
| Turn-On Delay Time (td(on)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 24 | - | ns |
| Rise Time (tr) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 43 | - | ns |
| Turn-Off Delay Time (td(off)) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 120 | - | ns |
| Fall Time (tf) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 30 | - | ns |
| Turn-On Switching Loss (Eon) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 1.14 | - | mJ |
| Turn-Off Switching Loss (Eoff) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 0.48 | - | mJ |
| Total Switching Loss (Ets) | VCC = 400 V, IC = 40 A, RG = 10 Ω, VGE = 15 V, Inductive Load, TC = 125°C | - | 1.62 | - | mJ |
| Total Gate Charge (Qg) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 120 | - | nC |
| Gate to Emitter Charge (Qge) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 14 | - | nC |
| Gate to Collector Charge (Qgc) | VCE = 400 V, IC = 40 A, VGE = 15 V | - | 58 | - | nC |
| Electrical Characteristics of the Diode | |||||
| Diode Forward Voltage (VFM) | IF = 20 A, TC = 25°C | - | 1.95 | 2.6 | V |
| Diode Forward Voltage (VFM) | IF = 20 A, TC = 125°C | - | 1.85 | - | V |
| Diode Reverse Recovery Time (trr) | IF=20 A, diF/dt = 200 A/μs, TC = 25°C | - | 45 | - | ns |
| Diode Reverse Recovery Time (trr) | IF=20 A, diF/dt = 200 A/μs, TC = 125°C | - | 140 | - | ns |
| Diode Reverse Recovery Charge (Qrr) | IF=20 A, TC = 25°C | - | 75 | - | nC |
| Diode Reverse Recovery Charge (Qrr) | IF=20 A, TC = 125°C | - | 375 | - | nC |
2410121611_onsemi-FGH40N60SFDTU_C49514.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
Surface Mount Schottky Bridge Rectifier YONGYUTAI MB14F with 40 Volt Reverse Voltage and 1 Amp Forward Current
Product OverviewThis MBF package Surface Mount Schottky Bridge rectifier offers a reverse voltage range of 40 to 200V and a forward current of 1A. It features high surge current capability and is designed for surface mount applications. Ideal for single-phase half-wave 60 Hz rectification with ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
