NPN NPN Double Resistor Equipped Transistors Nexperia PUMH18 115 AEC Q101 Qualified for Automotive
Key Attributes
Model Number:
PUMH18,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
6.1kΩ
Resistor Ratio:
2.6
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMH18,115
Package:
SOT-363
Product Description
Nexperia PEMH18; PUMH18 NPN/NPN Resistor-Equipped Transistors (RET)
Product Overview
The Nexperia PEMH18 and PUMH18 are NPN/NPN double Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices feature built-in bias resistors, reducing component count and simplifying circuit design. They are ideal for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications. The PEMH18 and PUMH18 are AEC-Q101 qualified, making them suitable for automotive applications.
Product Attributes
- Brand: Nexperia
- Technology: NPN/NPN double Resistor-Equipped Transistors (RET)
- Certifications: AEC-Q101 qualified
- Package Type: Surface-Mounted Device (SMD)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | Model |
|---|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V | Per transistor |
| IO | Output current | - | - | - | 100 | mA | Per transistor |
| R1 | Bias resistor 1 (input) | - | 3.3 | 4.7 | 6.1 | k℆ | Per transistor |
| R2/R1 | Bias resistor ratio | - | 1.7 | 2.1 | 2.6 | - | Per transistor |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V | Per transistor |
| VEBO | Emitter-base voltage | Open collector | - | - | 7 | V | Per transistor |
| VI | Input voltage | Positive | - | - | 20 | V | Per transistor |
| VI | Input voltage | Negative | - | - | -7 | V | Per transistor |
| ICM | Peak collector current | Single pulse; tp ≤ 1 ms | - | - | 100 | mA | Per transistor |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 200 | mW | PEMH18 (SOT666) |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 200 | mW | PUMH18 (SOT363) |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 300 | mW | Per device (PEMH18) |
| Ptot | Total power dissipation | Tamb ≤ 25 ℃ | - | - | 300 | mW | Per device (PUMH18) |
| Tj | Junction temperature | - | - | - | 150 | ℃ | - |
| Tamb | Ambient temperature | - | -65 | - | 150 | ℃ | - |
| Tstg | Storage temperature | - | -65 | - | 150 | ℃ | - |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PEMH18 (SOT666) | - | - | 625 | K/W | Per transistor |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PUMH18 (SOT363) | - | - | 625 | K/W | Per transistor |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PEMH18 (SOT666) | - | - | 417 | K/W | Per device |
| Rth(j-a) | Thermal resistance junction to ambient | Free air, PUMH18 (SOT363) | - | - | 417 | K/W | Per device |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA | Per transistor |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | µA | Per transistor |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 ℃ | - | - | 5 | µA | Per transistor |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 A | - | - | 600 | µA | Per transistor |
| hFE | DC current gain | VCE = 5 V; IC = 10 mA | 50 | - | - | - | Per transistor |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV | Per transistor |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 µA | - | 0.9 | 0.3 | V | Per transistor |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 20 mA | 2.5 | 1.5 | - | V | Per transistor |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF | Per transistor |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz | Per transistor |
Models and Packages
| Type Number | Package Name | Description | Package Configuration |
|---|---|---|---|
| PEMH18 | SOT666 | Plastic surface-mounted package; 6 leads | Ultra small and flat lead |
| PUMH18 | SC-88 | Plastic surface-mounted package; 6 leads | Very small |
Applications
- Low current peripheral driver
- Control of IC inputs
- Replaces general-purpose transistors in digital applications
Features and Benefits
- 100 mA output current capability
- Reduces component count
- Built-in bias resistors
- Reduces pick and place costs
- Simplifies circuit design
2410121738_Nexperia-PUMH18-115_C2908836.pdf
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