High voltage switching NPT IGBT device onsemi HGTG11N120CND ideal for AC DC motor controls and power supply drivers
Key Attributes
Model Number:
HGTG11N120CND
Product Custom Attributes
Td(off):
240ns
Pd - Power Dissipation:
298W
Td(on):
26ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Input Capacitance(Cies):
-
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
6V@90uA
Gate Charge(Qg):
120nC@15V
Operating Temperature:
-55℃~+150℃@(Tj)
Reverse Recovery Time(trr):
70ns
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
950uJ
Mfr. Part #:
HGTG11N120CND
Package:
TO-247AC-3
Product Description
Product Overview
The HGTG11N120CND is a Non-Punch Through (NPT) Series N-Channel IGBT with an integrated Anti-Parallel Hyperfast Diode. This device combines the high input impedance of a MOSFET with the low on-state conduction loss of a bipolar transistor, making it ideal for high voltage switching applications at moderate frequencies where low conduction losses are crucial. Applications include AC and DC motor controls, power supplies, and drivers for solenoids, relays, and contactors.
Product Attributes
- Brand: FAIRCHILD SEMICONDUCTOR
- Part Number: HGTG11N120CND
- Package: TO-247
- Development Type (IGBT): TA49291
- Development Type (Diode): TA49189
- Formerly Developmental Type: TA49303
- Certifications: Covered by U.S. Patents (list provided in source)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Collector to Emitter Breakdown Voltage | BVCES | IC = 250A, VGE = 0V | 1200 | - | - | V |
| IC = 250A, VGE = 0V | 1200 | - | - | V | ||
| Collector to Emitter Leakage Current | ICES | VCE = 1200V, TC = 25C | - | - | 250 | A |
| VCE = 1200V, TC = 125C | - | 300 | - | A | ||
| VCE = 1200V, TC = 150C | - | - | 3.5 | mA | ||
| Collector to Emitter Saturation Voltage | VCE(SAT) | IC = 11A, VGE = 15V, TC = 25C | - | 2.1 | 2.4 | V |
| IC = 11A, VGE = 15V, TC = 150C | - | 2.9 | 3.5 | V | ||
| Gate to Emitter Threshold Voltage | VGE(TH) | IC = 90A, VCE = VGE | 6.0 | 6.8 | - | V |
| Gate to Emitter Leakage Current | IGES | VGE = 20V | - | - | 250 | nA |
| Current Turn-On Delay Time | td(ON)I | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 23 | 26 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 21 | 24 | ns | ||
| Current Rise Time | trI | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 12 | 16 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 12 | 16 | ns | ||
| Current Turn-Off Delay Time | td(OFF)I | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 180 | 240 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 210 | 280 | ns | ||
| Current Fall Time | tfI | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 190 | 220 | ns |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 360 | 400 | ns | ||
| Turn-On Energy Loss | EON | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 0.95 | 1.3 | mJ |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 1.9 | 2.5 | mJ | ||
| Turn-Off Energy Loss | EOFF | IGBT and Diode at TJ = 25C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 1.3 | 1.6 | mJ |
| IGBT and Diode at TJ = 150C, ICE = 11A, VCE = 960V, VGE = 15V, RG = 10, L = 2mH | - | 2.1 | 2.5 | mJ | ||
| Diode Forward Voltage | VEC | IEC = 11A | - | 2.6 | 3.2 | V |
| IEC = 1A, dlEC/dt = 200A/s | - | 32 | 40 | ns | ||
| Diode Reverse Recovery Time | trr | IEC = 11A, dlEC/dt = 200A/s | - | 60 | 70 | ns |
| IEC = 1A, dlEC/dt = 200A/s | - | 32 | 40 | ns | ||
| Thermal Resistance Junction To Case (IGBT) | RJC | - | - | - | 0.42 | C/W |
| Thermal Resistance Junction To Case (Diode) | RJC | - | - | - | 1.25 | C/W |
| Collector Current Continuous | IC | At TC = 25C | - | - | 43 | A |
| At TC = 110C | - | - | 22 | A | ||
| Collector Current Pulsed | ICM | (Note 1) | - | - | 80 | A |
| Gate to Emitter Voltage Continuous | VGES | - | - | 20 | V | |
| Gate to Emitter Voltage Pulsed | VGEM | - | - | 30 | V | |
| Switching Safe Operating Area | SSOA | at TJ = 150C (Figure 2) | - | 55 | - | A at 1200V |
| Power Dissipation Total | PD | at TC = 25C | - | - | 298 | W |
| Power Dissipation Derating | TC > 25C | - | - | 2.38 | W/C | |
| Operating and Storage Junction Temperature Range | TJ, TSTG | - | -55 | - | 150 | C |
| Maximum Lead Temperature for Soldering | TL | - | - | - | 260 | C |
| Short Circuit Withstand Time | tSC | at VGE = 15V (Note 2) | - | - | 8 | s |
| at VGE = 12V (Note 2) | - | - | 15 | s |
2410121702_onsemi-HGTG11N120CND_C11755.pdf
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