Power Transistor onsemi UF3C065080T3S Silicon Carbide FET with Pb Free and RoHS Compliant Materials
Key Attributes
Model Number:
UF3C065080T3S
Product Custom Attributes
Mfr. Part #:
UF3C065080T3S
Package:
TO-220-3
Product Description
Product Overview
This Silicon Carbide (SiC) Cascode JFET device, the UF3C065080T3S, is a normally-off SiC FET designed for high-performance power applications. It integrates a normally-on SiC JFET with a Si MOSFET in a cascode configuration, offering standard gate-drive characteristics for easy integration as a drop-in replacement for Si IGBTs, Si FETs, SiC MOSFETs, and Si superjunction devices. Key advantages include ultra-low gate charge, exceptional reverse recovery, and very low switching losses, making it ideal for switching inductive loads and applications requiring standard gate drive. Available in a TO220-3 package.
Product Attributes
- Brand: onsemi
- Material: Silicon Carbide (SiC)
- Certifications: Pb-Free, Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Drain-source Voltage | VDS | 650 | V | |
| Gate-source Voltage | VGS | DC | -25 to +25 | V |
| Continuous Drain Current | ID | TC = 25 C | 31 | A |
| Continuous Drain Current | ID | TC = 100 C | 23 | A |
| Pulsed Drain Current | IDM | TC = 25 C | 65 | A |
| Power Dissipation | Ptot | TC = 25 C | 190 | W |
| Maximum Junction Temperature | TJ,max | 175 | C | |
| Operating and Storage Temperature | TJ, TSTG | -55 to 175 | C | |
| Thermal Resistance, Junction-to-Case | R JC | 0.61 (Typ) | C/W | |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 25 C | 80 (Typ) | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 125 C | 111 (Typ) | m |
| Drain-source On-resistance | RDS(on) | VGS = 12 V, ID = 20 A, TJ = 175 C | 141 (Typ) | m |
| Gate Threshold Voltage | VG(th) | VDS = 5 V, ID = 10 mA | 4 to 6 | V |
| Input Capacitance | Ciss | VDS = 100 V, VGS = 0 V, f = 100 kHz | 1500 (Typ) | pF |
| Output Capacitance | Coss | 104 (Typ) | pF | |
| Reverse Transfer Capacitance | Crss | 2.6 (Typ) | pF | |
| Total Gate Charge | QG | VDS = 400 V, ID = 20 A, VGS = -5 V to 15 V | 51 (Typ) | nC |
| Turn-on Energy Including RS Energy | EON | TJ = 25 C | 182 (Typ) | J |
| Turn-off Energy Including RS Energy | EOFF | TJ = 25 C | 24 (Typ) | J |
| Total Switching Energy Including RS Energy | ETOTAL | TJ = 25 C | 206 (Typ) | J |
| Turn-on Energy Including RS Energy | EON | TJ = 150 C | 156 (Typ) | J |
| Turn-off Energy Including RS Energy | EOFF | TJ = 150 C | 25 (Typ) | J |
| Total Switching Energy Including RS Energy | ETOTAL | TJ = 150 C | 181 (Typ) | J |
2507241715_onsemi-UF3C065080T3S_C45343118.pdf
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